Method for manufacturing semiconductor device

ABSTRACT

To provide a semiconductor device including an oxide semiconductor which is capable of having stable electric characteristics and achieving high reliability, by a dehydration or dehydrogenation treatment performed on a base insulating layer provided in contact with an oxide semiconductor layer, the water and hydrogen contents of the base insulating layer can be decreased, and by an oxygen doping treatment subsequently performed, oxygen which can be eliminated together with the water and hydrogen is supplied to the base insulating layer. By formation of the oxide semiconductor layer in contact with the base insulating layer whose water and hydrogen contents are decreased and whose oxygen content is increased, oxygen can be supplied to the oxide semiconductor layer while entry of the water and hydrogen into the oxide semiconductor layer is suppressed.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The disclosed invention relates to a semiconductor device and a methodfor manufacturing the semiconductor device.

In this specification and the like, a semiconductor device refers to alltypes of devices which can function by utilizing semiconductorcharacteristics; an electro-optical device, a light-emitting displaydevice, a semiconductor circuit, and an electronic device are allsemiconductor devices.

2. Description of the Related Art

A technique by which a transistor is formed with a semiconductor thinfilm formed over a substrate having an insulating surface has beenattracting attention. The transistor is applied to a wide range ofsemiconductor electronic devices such as an integrated circuit (IC) andan image display device (also simply referred to as a display device). Asilicon-based semiconductor material is widely known as a material for asemiconductor thin film applicable to the transistor. As anothermaterial, an oxide semiconductor has been attracting attention.

For example, a technique is disclosed by which a transistor ismanufactured using zinc oxide or an In—Ga—Zn-based oxide as an oxidesemiconductor (see Patent Documents 1 and 2).

It has been pointed out that hydrogen behaves as a carrier supply sourcein an oxide semiconductor. Therefore, some measures need to be taken toprevent hydrogen from entering the oxide semiconductor at the time offorming an oxide semiconductor. Further, a technique is disclosed bywhich variation of a threshold voltage is suppressed by reducing thehydrogen content of not only the oxide semiconductor but also a gateinsulating film in contact with the oxide semiconductor (see PatentDocument 3).

REFERENCE

[Patent Document 1] Japanese Published Patent Application No.2007-123861

[Patent Document 2] Japanese Published Patent Application No.2007-096055

[Patent Document 3] Japanese Published Patent Application No.2009-224479

SUMMARY OF THE INVENTION

Moreover, as well as hydrogen, an oxygen vacancy contained in an oxidesemiconductor behaves as a carrier supply source. The oxygen vacancy inthe oxide semiconductor serves as a donor to generate an electron thatis a carrier in the oxide semiconductor. A large number of oxygenvacancies in an oxide semiconductor included in a channel formationregion of a transistor leads to generation of electrons in the channelformation region and is thus a factor causing the shift of the thresholdvoltage of the transistor to the negative direction.

In view of the above problem, an object of one embodiment of the presentinvention is to provide a method for manufacturing a semiconductordevice including an oxide semiconductor, which is capable of havingstable electric characteristics and achieving high reliability.

In a method for manufacturing a semiconductor device according to oneembodiment of the present invention, in which an oxide semiconductorlayer is used for a channel formation region, a base insulating layerprovided in contact with the oxide semiconductor layer is dehydrated ordehydrogenated by a heat treatment and an oxygen doping treatment issubsequently performed on the dehydrated or dehydrogenated baseinsulating layer. By a heat treatment for the purpose of removing ahydrogen atom (hereinafter also referred to as a dehydration ordehydrogenation treatment), which is performed on the base insulatinglayer, the water and hydrogen contents of the base insulating layer canbe reduced. However, oxygen can be eliminated together with the waterand hydrogen by the heat treatment; therefore, it is necessary to supplyoxygen to the base insulating layer by the oxygen doping treatmentsubsequently performed. By formation of the oxide semiconductor layer incontact with the base insulating layer whose water and hydrogen contentsare decreased and whose oxygen content is increased, oxygen can besupplied to the oxide semiconductor layer while entry of the water andhydrogen into the oxide semiconductor layer is suppressed.

A doping treatment with oxygen or a rare gas is preferably performed onthe base insulating layer before the dehydration or dehydrogenationtreatment. By introduction of oxygen or a rare gas into the baseinsulating layer, a bond between hydrogen and an element included in thebase insulating layer (e.g., silicon) or a bond between a hydroxyl groupand the element are cleaved, the hydrogen or hydroxyl group reacts withoxygen, and then water is generated. Accordingly, hydrogen or a hydroxylgroup contained in the base insulating layer can be eliminated easily aswater by the subsequent heat treatment for the purpose of a dehydrationor dehydrogenation treatment. Further, in the heat treatment for thepurpose of a dehydration or dehydrogenation treatment, the temperaturecan be lowered or the processing time can be shortened.

Note that the heat treatment and/or the oxygen doping treatmentperformed on the base insulating layer may be repeated a plurality oftimes. After formation of the oxide semiconductor layer, the oxidesemiconductor layer may be subjected to a heat treatment for the purposeof a dehydration or dehydrogenation treatment thereof. The heattreatment performed on the oxide semiconductor layer is preferablyperformed before the oxide semiconductor layer is processed into anisland shape.

One embodiment of the present invention is a method for manufacturing asemiconductor device including the following steps: a step of forming abase insulating layer over an insulating surface; a step of removingwater or hydrogen contained in the base insulating layer by a heattreatment performed on the base insulating layer and then supplyingoxygen to the base insulating layer by an oxygen doping treatmentperformed on the base insulating layer; a step of forming an oxidesemiconductor layer over the base insulating layer subjected to the heattreatment and the oxygen doping treatment; a step of forming a gateinsulating layer over the oxide semiconductor layer; and a step offorming a gate electrode layer over the oxide semiconductor layer withthe gate insulating layer provided therebetween.

Another embodiment of the present invention is a method formanufacturing a semiconductor device including the following steps: astep of forming a base insulating layer over an insulating surface; astep of supplying oxygen to the base insulating layer by a first oxygendoping treatment performed on the base insulating layer; a step ofremoving water or hydrogen contained in the base insulating layer by aheat treatment performed on the base insulating layer and then supplyingoxygen to the base insulating layer by a second oxygen doping treatmentperformed on the base insulating layer; a step of forming an oxidesemiconductor layer over the base insulating layer subjected to thefirst oxygen doping treatment, the heat treatment, and the second oxygendoping treatment; a step of forming a gate insulating layer over theoxide semiconductor layer; and a step of forming a gate electrode layerover the oxide semiconductor layer with the gate insulating layerprovided therebetween.

Another embodiment of the present invention is a method formanufacturing a semiconductor device including the following steps: astep of forming a base insulating layer over an insulating surface; astep of removing water or hydrogen contained in the base insulatinglayer by a first heat treatment performed on the base insulating layerand then supplying oxygen to the base insulating layer by an oxygendoping treatment performed on the base insulating layer; a step offorming an oxide semiconductor layer over the base insulating layersubjected to the first heat treatment and the oxygen doping treatment; astep of supplying oxygen to the oxide semiconductor layer from the baseinsulating layer by a second heat treatment performed on the oxidesemiconductor layer; a step of forming an island-shaped oxidesemiconductor layer by processing the oxide semiconductor layer; a stepof forming a gate insulating layer covering the island-shaped oxidesemiconductor layer; and a step of forming a gate electrode layer overthe island-shaped oxide semiconductor layer with the gate insulatinglayer provided therebetween.

Another embodiment of the present invention is a method formanufacturing a semiconductor device including the following steps: astep of forming a base insulating layer over an insulating surface; astep of supplying oxygen to the base insulating layer by a first oxygendoping treatment performed on the base insulating layer; a step ofremoving water or hydrogen contained in the base insulating layer by afirst heat treatment performed on the base insulating layer and thensupplying oxygen to the base insulating layer by a second oxygen dopingtreatment performed on the base insulating layer; a step of forming anoxide semiconductor layer over the base insulating layer subjected tothe first oxygen doping treatment, the first heat treatment, and thesecond oxygen doping treatment; a step of supplying oxygen to the oxidesemiconductor layer from the base insulating layer by a second heattreatment performed on the oxide semiconductor layer; a step of formingan island-shaped oxide semiconductor layer by processing the oxidesemiconductor layer; a step of forming a gate insulating layer coveringthe island-shaped oxide semiconductor layer; and a step of forming agate electrode layer over the island-shaped oxide semiconductor layerwith the gate insulating layer provided therebetween.

Further, in any of the above methods for manufacturing a semiconductordevice, the base insulating layer is preferably formed by aplasma-enhanced chemical vapor deposition method.

According to one embodiment of the present invention, a semiconductordevice including an oxide semiconductor, which is capable of havingstable electric characteristics and achieving high reliability, can beprovided.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1A to 1C are a plan view and cross-sectional views of asemiconductor device according to one embodiment of the presentinvention.

FIGS. 2A to 2E are cross-sectional views illustrating a method formanufacturing a semiconductor device according to one embodiment of thepresent invention.

FIGS. 3A to 3C are a plan view and cross-sectional views of asemiconductor device according to one embodiment of the presentinvention.

FIGS. 4A to 4E are cross-sectional views illustrating a method formanufacturing a semiconductor device according to one embodiment of thepresent invention.

FIGS. 5A to 5C are cross-sectional views illustrating a method formanufacturing a semiconductor device according to one embodiment of thepresent invention.

FIGS. 6A to 6C are cross-sectional views illustrating a method formanufacturing a semiconductor device according to one embodiment of thepresent invention.

FIGS. 7A to 7C are a cross-sectional view, a plan view, and a circuitdiagram illustrating one embodiment of a semiconductor device.

FIGS. 8A and 8B are a circuit diagram and a perspective viewillustrating one embodiment of a semiconductor device.

FIGS. 9A and 9B are a cross-sectional view and a plan view illustratingone embodiment of a semiconductor device.

FIGS. 10A and 10B are circuit diagrams each illustrating one embodimentof a semiconductor device.

FIG. 11 is a block diagram illustrating one embodiment of asemiconductor device.

FIG. 12 is a block diagram illustrating one embodiment of asemiconductor device.

FIG. 13 is a block diagram illustrating one embodiment of asemiconductor device.

FIGS. 14A to 14C show evaluation results of electric characteristics oftransistors manufactured in Example.

DETAILED DESCRIPTION OF THE INVENTION

Embodiments and an example of the invention disclosed in thisspecification are described in detail below with reference to thedrawings. However, the invention disclosed in this specification is notlimited to the following description, and it will be easily understoodby those skilled in the art that modes and details thereof can bevariously changed. Therefore, the invention disclosed in thisspecification is not construed as being limited to the description ofthe following embodiments and example. Note that in structures of thepresent invention described below, the same portions or portions havingsimilar functions are denoted by the same reference numerals indifferent drawings, and description thereof is not repeated. Further,the same hatching pattern is applied to portions having similarfunctions, and the portions are not especially denoted by referencenumerals in some cases.

In this specification, ordinal numbers such as “first” and “second areused in order to avoid confusion among components, and the terms do notlimit the components numerically.

Embodiment 1

In this embodiment, a semiconductor device according to one embodimentof the present invention and a method for manufacturing thesemiconductor device will be described with reference to FIGS. 1A to 1Cand FIGS. 2A to 2E.

FIGS. 1A to 1C illustrate a structural example of a transistor 420. FIG.1A is a plan view of the transistor 420, FIG. 1B is a cross-sectionalview taken along the line X1-Y1 in FIG. 1A, and FIG. 1C is across-sectional view taken along the line V1-W1 in FIG. 1A. Note that inFIG. 1A, some components of the transistor 420 (e.g., an interlayerinsulating layer 412) are not illustrated for clarity.

The transistor 420 illustrated in FIGS. 1A to 1C includes a baseinsulating layer 402 provided over a substrate 400, an oxidesemiconductor layer 404 provided over the base insulating layer 402, agate insulating layer 406 provided over the oxide semiconductor layer404, a gate electrode layer 408 which overlaps with the oxidesemiconductor layer 404 with the gate insulating layer 406 providedtherebetween, and a source electrode layer 414 a and a drain electrodelayer 414 b electrically connected to the oxide semiconductor layer 404.In addition, the transistor 420 may further include, as its components,an interlayer insulating layer 410 and an interlayer insulating layer412 which are provided over the gate electrode layer 408.

In the transistor 420 illustrated in FIGS. 1A to 1C, the base insulatinglayer 402 is a base insulating layer whose water and hydrogen contentsare decreased by a dehydration or dehydrogenation treatment and whoseoxygen content is increased by a subsequent oxygen doping treatment. Byformation of the oxide semiconductor layer 404 in contact with the baseinsulating layer 402 whose water and hydrogen contents are decreased andwhose oxygen content is increased, the transistor 420 can have higherreliability.

An example of a method for manufacturing the transistor 420 illustratedin FIGS. 1A to 1C will be described below with reference to FIGS. 2A to2E.

First, the base insulating layer 402 is formed over the substrate 400having an insulating surface (see FIG. 2A).

There is no particular limitation on a substrate that can be used as thesubstrate 400 having an insulating surface as long as it has at leastheat resistance to withstand a heat treatment step performed later. Forexample, a glass substrate of barium borosilicate glass,aluminoborosilicate glass, or the like, a ceramic substrate, a quartzsubstrate, or a sapphire substrate can be used. A single crystalsemiconductor substrate or a polycrystalline semiconductor substrate ofsilicon, silicon carbide, or the like; a compound semiconductorsubstrate of silicon germanium or the like; an SOI substrate; or thelike can be used as the substrate 400, or such a substrate provided witha semiconductor element can be used as the substrate 400.

Alternatively, the semiconductor device may be manufactured using aflexible substrate as the substrate 400. In order to manufacture aflexible semiconductor device, the transistor 420 including the oxidesemiconductor layer 404 may be directly formed on a flexible substrate,or the transistor 420 including the oxide semiconductor layer 404 may beformed over a different manufacturing substrate and then separated andtransferred to a flexible substrate. Note that in order to separate thetransistor 420 including the oxide semiconductor layer from themanufacturing substrate and transfer it to the flexible substrate, aseparation layer may be provided between the manufacturing substrate andthe transistor 420 including the oxide semiconductor.

In this embodiment, the base insulating layer 402 is formed by aplasma-enhanced chemical vapor deposition (CVD) method. With aplasma-enhanced CVD method, time necessary for film formation (takttime) can be made shorter than that in the case of a sputtering method.Further, with a plasma-enhanced CVD method, variation in the plane ofthe base insulating layer 402 which is formed is smaller and entry ofparticles into the plane thereof occur less frequently than those in thecase of a sputtering method. Therefore, it is effective to form the baseinsulating layer 402 by a plasma-enhanced CVD method particularly in thecase where a large-sized substrate is used. Note that a low-temperatureoxide (LTO) film may be used as the base insulating layer 402.

The base insulating layer 402 can have a single-layer or a layeredstructure including one or more films selected from those containingsilicon oxide, silicon nitride, silicon oxynitride, silicon nitrideoxide, aluminum oxide, aluminum nitride, aluminum oxynitride, aluminumnitride oxide, hafnium oxide, and gallium oxide, and a mixed material ofany of these materials. Note that the base insulating layer 402preferably has a single-layer structure or a layered structure includingan oxide insulating film so that the oxide insulating film is in contactwith an oxide semiconductor layer to be formed later. The baseinsulating layer 402 may also be amorphous.

Note that it is more difficult to reduce the hydrogen concentration in afilm with a plasma-enhanced CVD method than with a sputtering method.Therefore, in this embodiment, a heat treatment for the purpose ofremoving a hydrogen atom (a dehydration or dehydrogenation treatment) isperformed on the base insulating layer 402 after its formation.

The temperature of the heat treatment is higher than or equal to 250° C.and lower than or equal to 650° C., preferably higher than or equal to450° C. and lower than or equal to 600° C. or lower than the strainpoint of the substrate. For example, the substrate is put in an electricfurnace which is one of heat treatment apparatuses, and the heattreatment is performed on the base insulating layer 402 at 650° C. in avacuum (reduced-pressure) atmosphere for an hour.

Note that the heat treatment apparatus is not limited to an electricfurnace, and an apparatus for heating an object to be processed by heatconduction or heat radiation from a heating element such as a resistanceheating element may be used. For example, a rapid thermal annealing(RTA) apparatus such as a gas rapid thermal annealing (GRTA) apparatusor a lamp rapid thermal annealing (LRTA) apparatus can be used. The LRTAapparatus is an apparatus for heating an object to be processed byradiation of light (an electromagnetic wave) emitted from a lamp such asa halogen lamp, a metal halide lamp, a xenon arc lamp, a carbon arclamp, a high-pressure sodium lamp, or a high-pressure mercury lamp. Inthe GRTA apparatus, a heat treatment is performed using ahigh-temperature gas. As the high-temperature gas, an inert gas whichdoes not react with an object to be processed by the heat treatment,such as nitrogen or a rare gas like argon, is used. Note that in thecase where a GRTA apparatus is used as the heat treatment apparatus, thesubstrate may be heated in an inert gas heated to high temperature of650° C. to 700° C. because the heat treatment time is short.

The heat treatment can be performed under an atmosphere of nitrogen,oxygen, ultra-dry air (air in which the moisture content is less than orequal to 20 ppm, preferably less than or equal to 1 ppm, more preferablyless than or equal to 10 ppb), or a rare gas (e.g., argon or helium). Itis preferable that water, hydrogen, and the like be not contained in theabove atmosphere of nitrogen, oxygen, ultra-dry air, the rare gas, orthe like. Alternatively, it is preferable that the purity of nitrogen,oxygen, or the rare gas which is introduced into the heat treatmentapparatus be set to be higher than or equal to 6N (99.9999%), morepreferably higher than or equal to 7N (99.99999%) (i.e., theconcentration of impurities is lower than or equal to 1 ppm, preferablylower than or equal to 0.1 ppm).

Next, a treatment for introducing oxygen 431 (also referred to as anoxygen doping treatment or an oxygen implanting treatment) is performedon the base insulating layer 402 subjected to the dehydration ordehydrogenation treatment (see FIG. 2B). At least any of an oxygenradical, ozone, an oxygen atom, and an oxygen ion (including a molecularion and a cluster ion) is included in the oxygen 431. By the oxygendoping treatment performed on the base insulating layer 402 subjected tothe dehydration or dehydrogenation treatment, oxygen can be contained inthe base insulating layer 402, which enables oxygen which has eliminatedin the above heat treatment to be compensated and also oxygen to becontained in either or both the oxide semiconductor layer 404 formedlater or/and in the vicinity of the interface between the baseinsulating layer 402 and the oxide semiconductor layer 404.

As a method for introducing oxygen 431 into the base insulating layer402, for example, an ion implantation method, an ion doping method, aplasma immersion ion implantation method, or a plasma treatment can beused. Note that as an ion implantation method, a gas cluster ion beammay be used. Oxygen may be introduced into the entire surface of thesubstrate 400 at a time. Alternatively, a linear ion beam may be used,for example. In the case of using a linear ion beam, relative movement(scanning) of the substrate or the ion beam enables the oxygen 431 to beintroduced into the entire surface of the base insulating layer 402.

As a supply gas of the oxygen 431, a gas containing oxygen (O) can beused; for example, an O₂ gas, an N₂O gas, a CO₂ gas, a CO gas, or an NO₂gas can be used. Note that a rare gas (e.g., an Ar gas) may be containedin the supply gas of the oxygen.

For example, in the case where oxygen is introduced by an ionimplantation method, the dosage of the oxygen 431 is preferably greaterthan or equal to 1×10¹³ ions/cm² and less than or equal to 5×10¹⁶ions/cm², and it is preferable that the oxygen content of the baseinsulating layer 402 after the oxygen doping treatment be in substantialexcess of that of the stoichiometric composition of the base insulatinglayer 402. For example, in the case where silicon oxide whosecomposition is represented by SiO_(x) (x>0) is used, since a singlecrystal of silicon oxide is SiO₂, x is preferably greater than 2. Notethat a region whose oxygen content exceeds that of the stoichiometriccomposition (hereinafter also referred to as “an oxygen-excess region”)at least exist in part of the base insulating layer 402. The depth inthe base insulating layer 402 at which oxygen is implanted can becontrolled as appropriate.

Note that in the case where an oxide insulating layer is used as thebase insulating layer 402, oxygen is one of the main components of theoxide insulating layer. Therefore, it is difficult to estimate theoxygen concentration in the oxide insulating layer accurately withSecondary Ion Mass Spectrometry (SIMS) or the like. That is, it isdifficult to judge whether oxygen is intentionally implanted into theoxide insulating layer or not. Moreover, the same can be said for thecase where excess oxygen contained in the base insulating layer 402 issupplied to the oxide semiconductor layer in a later step.

Incidentally, it is known that oxygen contains isotopes such as ¹⁷O and¹⁸O and the proportions of ¹⁷O and ¹⁸O in all of the oxygen atoms innature is about 0.038% and about 0.2%, respectively. That is to say, itis possible to measure the concentrations of these isotopes in the baseinsulating layer (or the oxide semiconductor layer) by a method such asSIMS; therefore, the oxygen concentration in the base insulating layer(or the oxide semiconductor layer) may be able to be estimated moreaccurately by measuring the concentrations of these isotopes. Thus, theconcentrations of these isotopes may be measured to determine whetheroxygen is intentionally implanted into the base insulating layer (or theoxide semiconductor layer).

In the case of the transistor including an oxide semiconductor, supplyof oxygen from the base insulating layer to the oxide semiconductorlayer enables reduction of an interface state density at the interfacebetween the oxide semiconductor layer and the base insulating layer. Asa result, carrier trapping at the interface between the oxidesemiconductor layer and the base insulating layer due to the operationof a transistor, or the like can be suppressed; thus, a highly reliabletransistor can be obtained.

Further, electric charges are in some cases generated owing to oxygenvacancies in the oxide semiconductor layer. In general, parts of oxygenvacancies in an oxide semiconductor film serve as a donor to releaseelectrons as carriers. As a result, in a transistor including an oxidesemiconductor layer having oxygen vacancies, the threshold voltageshifts to the negative direction. When oxygen is sufficiently suppliedfrom the base insulating layer to the oxide semiconductor layer and theoxide semiconductor layer preferably contains excess oxygen, the densityof oxygen vacancies in the oxide semiconductor layer, which cause theshift of the threshold voltage to the negative direction, can bereduced.

The excess oxygen contained in the base insulating layer 402 can besupplied to the oxide semiconductor layer 404 in contact with the baseinsulating layer 402 by a heat treatment in a manufacturing process ofthe transistor (e.g., heating of the substrate 400 at the time ofdepositing an oxide semiconductor layer or the deposition temperature atthe time of depositing the gate insulating layer). Therefore, anoxygen-excess region is formed in at least part of the interface betweenthe base insulating layer 402 and the oxide semiconductor layer 404 orpart of the oxide semiconductor layer 404 (in a bulk) of the transistor420. Note that a heat treatment step for the purpose of supplying oxygenfrom the base insulating layer 402 to the oxide semiconductor layer 404may be added.

Next, the oxide semiconductor layer is formed over the base insulatinglayer 402 into which oxygen is introduced and processed into an islandshape to form the oxide semiconductor layer 404 (see FIG. 2C).

The oxide semiconductor layer 404 may have either a single-layerstructure or a layered structure. Further, the oxide semiconductor layermay either have an amorphous structure or a crystalline structure. Inthe case where the oxide semiconductor layer 404 has an amorphousstructure, a heat treatment may be performed on the oxide semiconductorlayer 404 in a later manufacturing process so that the oxidesemiconductor layer 404 has crystallinity. The heat treatment forcrystallizing the amorphous oxide semiconductor layer is performed at atemperature higher than or equal to 250° C. and lower than or equal to700° C., preferably higher than or equal to 400° C., more preferablyhigher than or equal to 500° C., much more preferably higher than orequal to 550° C. Note that the heat treatment can also serve as anotherheat treatment in the manufacturing process.

The oxide semiconductor layer 404 can be formed by a sputtering method,a molecular beam epitaxy (MBE) method, a CVD method, a pulse laserdeposition method, an atomic layer deposition (ALD) method, or the likeas appropriate. The oxide semiconductor layer 404 may be formed with asputtering apparatus which performs deposition in the state where topsurfaces of a plurality of substrates are substantially perpendicular toa top surface of a sputtering target.

At the time of forming the oxide semiconductor layer 404, theconcentration of hydrogen contained in the oxide semiconductor layer 404is preferably reduced as much as possible. In order to reduce thehydrogen concentration, for example, in the case where the oxidesemiconductor layer 404 is formed by a sputtering method, a rare gas(typically, an argon gas), an oxygen gas, and a mixed gas of a rare gasand an oxygen gas, which are high-purity gases and from which impuritiessuch as hydrogen, water, a hydroxyl group, and hydride are removed, areused as appropriate as an atmosphere gas supplied to a treatment chamberof the sputtering apparatus.

The oxide semiconductor layer 404 is deposited in such a manner that asputtering gas from which hydrogen and moisture have been removed isintroduced into the treatment chamber while moisture remaining thereinis removed, whereby the hydrogen concentration in the deposited oxidesemiconductor layer can be reduced. In order to remove moistureremaining in the treatment chamber, an entrapment vacuum pump such as acryopump, an ion pump, or a titanium sublimation pump is preferablyused. A turbo molecular pump to which a cold trap is added may be used.In the treatment chamber which is evacuated with a cryopump, forexample, a hydrogen atom, a compound containing a hydrogen atom, such aswater (H₂O), (more preferably, also a compound containing a carbonatom), and the like have high evacuation capability; therefore, theconcentration of an impurity contained in the oxide semiconductor layer404 deposited in the treatment chamber can be reduced.

Further, when the oxide semiconductor layer 404 is formed by asputtering method, the relative density (fill rate) of a metal oxidetarget that is used for the deposition is greater than or equal to 90%,preferably greater than or equal to 95%. With the use of a metal oxidetarget with a high relative density, a dense oxide semiconductor layercan be formed.

In order to reduce the impurity concentration in the oxide semiconductorlayer 404, it is also effective to form the oxide semiconductor layer404 while the substrate 400 is kept at high temperature. The heatingtemperature of the substrate 400 is higher than or equal to 150° C. andlower than or equal to 450° C., and the substrate temperature ispreferably higher than or equal to 200° C. and lower than or equal to350° C. A crystalline oxide semiconductor layer can be formed by heatingthe substrate at a high temperature at the time of the film formation.

An oxide semiconductor to be used for the oxide semiconductor layer 404preferably contains at least indium (In) or zinc (Zn). In particular,both In and Zn are preferably contained. It is preferable that gallium(Ga) be additionally contained as a stabilizer for reducing a variationin electric characteristics of the transistor including the oxidesemiconductor layer. Tin (Sn) is preferably contained as a stabilizer.Hafnium (Hf) is preferably contained as a stabilizer. Aluminum (Al) ispreferably contained as a stabilizer. Zirconium (Zr) is preferablycontained as a stabilizer.

As another stabilizer, one or plural kinds of lanthanoid such aslanthanum (La), cerium (Ce), praseodymium (Pr), neodymium (Nd), samarium(Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy),holmium (Ho), erbium (Er), thulium (Tm), ytterbium (Yb), or lutetium(Lu) may be contained.

As the oxide semiconductor, for example, any of the following can beused: indium oxide; tin oxide; zinc oxide; a two-component metal oxidesuch as an In—Zn-based oxide, a Sn—Zn-based oxide, an Al—Zn-based oxide,a Zn—Mg-based oxide, a Sn—Mg-based oxide, an In—Mg-based oxide, or anIn—Ga-based oxide; a three-component metal oxide such as anIn—Ga—Zn-based oxide (also referred to as IGZO), an In—Al—Zn-basedoxide, an In—Sn—Zn-based oxide, a Sn—Ga—Zn-based oxide, anAl—Ga—Zn-based oxide, a Sn—Al—Zn-based oxide, an In—Hf—Zn-based oxide,an In—La—Zn-based oxide, an In—Ce—Zn-based oxide, an In—Pr—Zn-basedoxide, an In—Nd—Zn-based oxide, an In—Sm—Zn-based oxide, anIn—Eu—Zn-based oxide, an In—Gd—Zn-based oxide, an In—Tb—Zn-based oxide,an In—Dy—Zn-based oxide, an In—Ho—Zn-based oxide, an In—Er—Zn-basedoxide, an In—Tm—Zn-based oxide, an In—Yb—Zn-based oxide, or anIn—Lu—Zn-based oxide; a four-component metal oxide such as anIn—Sn—Ga—Zn-based oxide, an In—Hf—Ga—Zn-based oxide, anIn—Al—Ga—Zn-based oxide, an In—Sn—Al—Zn-based oxide, anIn—Sn—Hf—Zn-based oxide, or an In—Hf—Al—Zn-based oxide.

Note that here, for example, an “In—Ga—Zn-based oxide” means an oxidecontaining In, Ga, and Zn as its main component and there is noparticular limitation on the ratio of In:Ga:Zn. The In—Ga—Zn-based oxidemay contain a metal element other than In, Ga, and Zn.

Alternatively, a material represented by a chemical formulaInMO₃(ZnO)_(m) (m>0 is satisfied, and m is not an integer) may be usedas an oxide semiconductor. Note that M represents one or more metalelements selected from Ga, Fe, Mn, and Co. Alternatively, as the oxidesemiconductor, a material represented by a chemical formulaIn₂SnO₅(ZnO)_(n) (n>0, n is an integer) may be used.

For example, an In—Ga—Zn-based oxide with an atomic ratio of In:Ga:Znbeing 1:1:1 (=⅓:⅓:⅓), 2:2:1 (=⅖:⅖:⅕), or 3:1:2 (=½:⅙:⅓), or any ofoxides whose composition is in the neighborhood of the abovecompositions can be used. Alternatively, an In—Sn—Zn-based oxide with anatomic ratio of In:Sn:Zn is 1:1:1 (=⅓:⅓:⅓), 2:1:3 (=⅓:⅙:½), or 2:1:5(=¼:⅛:⅝), or any of oxides whose composition is in the neighborhood ofthe above compositions can be used.

However, without limitation to the materials given above, a materialhaving an appropriate composition can be used in accordance withsemiconductor characteristics which are necessary (such as mobility,threshold value, and variation). In order to obtain semiconductorcharacteristics which are necessary, it is preferable that the carrierdensity, the impurity concentration, the defect density, the atomicratio of a metal element to oxygen, the interatomic distance, thedensity, and the like be set as appropriate.

For example, high mobility can be obtained relatively easily in the caseof using an In—Sn—Zn-based oxide. However, mobility can be increased byreducing the defect density in a bulk also in the case of using anIn—Ga—Zn-based oxide.

Note that for example, the expression “the composition of an oxideincluding In, Ga, and Zn at the atomic ratio, In:Ga:Zn=a:b:c (a+b+c=1),is in the neighborhood of the composition of an oxide including In, Ga,and Zn at the atomic ratio, In:Ga:Zn=A:B:C (A+B+C=1)” means that a, b,and c satisfy the following relation: (a−A)²+(b−B)²+(c−C)²≦r², and r maybe 0.05, for example. The same applies to other oxides.

It is preferable that a high-purity gas from which an impurity such ashydrogen, water, a hydroxyl group, or hydride is removed be used as asputtering gas at the time of forming the oxide semiconductor layer 404.

The oxide semiconductor layer 404 is preferably a c-axis alignedcrystalline oxide semiconductor (CAAC-OS) film.

The CAAC-OS film is not completely single crystal nor completelyamorphous. The CAAC-OS film is an oxide semiconductor layer with acrystal-amorphous mixed phase structure where a crystal portion and anamorphous portion are included in an amorphous phase. Note that in mostcases, the crystal portion fits inside a cube whose one side is lessthan 100 nm. From an observation image obtained with a transmissionelectron microscope (TEM), a boundary between an amorphous portion and acrystal portion in the CAAC-OS film is not clear. Further, with the TEM,a grain boundary in the CAAC-OS film is not found. Thus, in the CAAC-OSfilm, a reduction in electron mobility, which is due to the grainboundary, is suppressed.

In each of the crystal portions included in the CAAC-OS film, a c-axisis aligned in a direction parallel to a normal vector of a surface wherethe CAAC-OS film is formed or a normal vector of a surface of theCAAC-OS film, triangular or hexagonal atomic arrangement which is seenfrom the direction perpendicular to the a-b plane is formed, and metalatoms are arranged in a layered manner or metal atoms and oxygen atomsare arranged in a layered manner when seen from the directionperpendicular to the c-axis. Note that, among crystal portions, thedirections of the a-axis and the b-axis of one crystal region may bedifferent from those of another crystal region. In this specification, asimple term “perpendicular” includes a range from 85° to 95°. Inaddition, a simple term “parallel” includes a range from −5° to 5°.

In the CAAC-OS film, distribution of crystal portions is not necessarilyuniform. For example, in the formation process of the CAAC-OS film, inthe case where crystal growth occurs from a surface side of the oxidesemiconductor film, the proportion of crystal portions in the vicinityof the surface of the oxide semiconductor film is in some cases higherthan that in the vicinity of the surface where the oxide semiconductorfilm is formed. Further, when an impurity is added to the CAAC-OS film,the crystal portion in a region to which the impurity is added becomesamorphous in some cases.

Since the c-axes of the crystal portions included in the CAAC-OS filmare aligned in the direction parallel to a normal vector of a surfacewhere the CAAC-OS film is formed or a normal vector of a surface of theCAAC-OS film, the directions of the c-axes may be different from eachother depending on the shape of the CAAC-OS film (the cross-sectionalshape of the surface where the CAAC-OS film is formed or thecross-sectional shape of the surface of the CAAC-OS film). Note thatwhen the CAAC-OS film is formed, the direction of c-axis of the crystalportion is the direction parallel to a normal vector of the surfacewhere the CAAC-OS film is formed or a normal vector of the surface ofthe CAAC-OS film. The crystal portion is formed by film formation or byperforming a treatment for crystallization such as a heat treatmentafter film formation.

With the use of the CAAC-OS film in a transistor, change in electriccharacteristics of the transistor due to irradiation with visible lightor ultraviolet light is small. Thus, the transistor has highreliability.

There are three methods for obtaining a CAAC-OS film when the CAAC-OSfilm is used for the oxide semiconductor layer 404. The first method isto deposit an oxide semiconductor layer at a deposition temperaturehigher than or equal to 200° C. and lower than or equal to 450° C.,thereby obtaining c-axis alignment substantially perpendicular to thesurface of the oxide semiconductor layer 404. The second method is todeposit a thin oxide semiconductor layer and then subject the layer to aheat treatment performed at a temperature higher than or equal to 200°C. and lower than or equal to 700° C., thereby obtaining c-axisalignment substantially perpendicular to the surface thereof. The thirdmethod is to deposit a first thin oxide semiconductor layer, subject thelayer to a heat treatment performed at a temperature higher than orequal to 200° C. and lower than or equal to 700° C., and then deposit asecond oxide semiconductor layer, thereby obtaining c-axis alignmentsubstantially perpendicular to the surface thereof.

For example, the CAAC-OS film is formed by a sputtering method with apolycrystalline oxide semiconductor sputtering target. When ions collidewith the sputtering target, a crystal region included in the sputteringtarget may be cleaved along an a-b plane, and a sputtered particlehaving a plane parallel to an a-b plane (flat-plate-like sputteredparticle or pellet-like sputtered particle) may separate from thesputtering target. In that case, the flat-plate-like sputtered particlereaches a substrate while maintaining their crystal state, whereby theCAAC-OS film can be formed.

For the deposition of the CAAC-OS film, the following conditions arepreferably employed.

By reducing the amount of impurities entering the CAAC-OS film duringthe deposition, the crystal state can be prevented from being broken bythe impurities. For example, the concentration of impurities (e.g.,hydrogen, water, carbon dioxide, and nitrogen) which exist in thedeposition chamber may be reduced. Furthermore, the concentration ofimpurities in a deposition gas may be reduced. Specifically, adeposition gas whose dew point is lower than or equal to −80° C.,preferably lower than or equal to −100° C. is used.

By increasing the substrate heating temperature during the deposition,when the flat-plate-like sputtered particle reaches the substrate,migration occurs on the substrate surface, so that a flat plane of theflat-plate-like sputtered particle is attached to the substrate.Specifically, the substrate heating temperature during the deposition ishigher than or equal to 100° C. and lower than or equal to 740° C.,preferably higher than or equal to 200° C. and lower than or equal to500° C.

Further, it is preferable that the proportion of oxygen in thedeposition gas be increased and the power be optimized in order toreduce plasma damage at the deposition. The proportion of oxygen in thedeposition gas is higher than or equal to 30 vol. %, preferably lowerthan or equal to 100 vol. %.

As an example of the sputtering target, an In—Ga—Zn—O compound targetwill be described below.

The In—Ga—Zn—O compound target which is polycrystalline is made bymixing InO_(x) powder, GaO_(y) powder, and ZnO_(z) powder in apredetermined molar ratio, applying pressure, and performing a heattreatment at a temperature higher than or equal to 1000° C. and lowerthan or equal to 1500° C. Note that x, y, and z are each a givenpositive number. Here, the predetermined molar ratio of InO_(x) powderto GaO_(y) powder and ZnO_(z) powder is, for example, 2:2:1, 8:4:3,3:1:1, 1:1:1, 4:2:3, or 3:1:2. The kinds of powder and the molar ratiofor mixing powder may be determined as appropriate depending on thedesired sputtering target.

Before the formation of the oxide semiconductor layer 404, aplanarization treatment may be performed on the surface on which theoxide semiconductor layer 404 is to be formed. As the planarizationtreatment, a polishing treatment (e.g., a chemical mechanical polishing(CMP) method), a dry etching treatment, or a plasma treatment can beused, though there is no particular limitation on the planarizationtreatment.

As a plasma treatment, reverse sputtering in which an argon gas isintroduced and plasma is generated can be performed. The reversesputtering is a method in which voltage is applied to a substrate sidewith the use of an RF power source in an argon atmosphere and plasma isgenerated in the vicinity of the substrate so that a substrate surfaceis modified. Note that instead of an argon atmosphere, a nitrogenatmosphere, a helium atmosphere, an oxygen atmosphere, or the like maybe used. The reverse sputtering can remove particle substances (alsoreferred to as particles or dust) attached to the surface on which theoxide semiconductor layer 404 is formed.

As the planarization treatment, a polishing treatment, a dry etchingtreatment, or a plasma treatment may be performed plural times, or thesetreatments may be performed in combination. In the case where thetreatments are combined, the order of steps is not particularly limitedand may be set as appropriate depending on the roughness of the surfaceof the oxide semiconductor layer 404.

Next, the gate insulating layer 406 is formed over the oxidesemiconductor layer 404. The gate insulating layer 406 has a thicknesslarger than or equal to 1 nm and smaller than or equal to 20 nm and canbe formed by a sputtering method, a MBE method, a CVD method, a pulselaser deposition method, an ALD method, or the like as appropriate.Alternatively, the gate insulating layer 406 may be formed with asputtering apparatus where deposition is performed with surfaces of aplurality of substrates set to be substantially perpendicular to asurface of a sputtering target.

Note that in the case where the gate insulating layer 406 is formed by aCVD method, a dehydration or dehydrogenation treatment and a subsequentoxygen doping treatment may be performed on the gate insulating layer406 after its formation.

The gate insulating layer 406 can be formed using silicon oxide, galliumoxide, aluminum oxide, silicon nitride, silicon oxynitride, aluminumoxynitride, silicon nitride oxide, or the like. It is preferable thatthe gate insulating layer 406 include oxygen in a portion which is incontact with the oxide semiconductor layer 404.

The gate insulating layer 406 can be formed using a high-k material suchas hafnium oxide, yttrium oxide, hafnium silicate, hafnium silicate towhich nitrogen is added, hafnium aluminate, or lanthanum oxide, wherebygate leakage current can be reduced. Further, the gate insulating layer406 may have either a single-layer structure or a layered structure.

Note that after the gate insulating layer 406 is formed, a depositiontemperature of a layer which will be formed over the gate insulatinglayer 406 (e.g., the gate electrode layer 408, the interlayer insulatinglayer 410, or the interlayer insulating layer 412) is preferably set tobe lower than or equal to the deposition temperature of the gateinsulating layer 406. Similarly, in the case where a heat treatment isperformed after the gate insulating layer 406 is formed in amanufacturing process of the transistor, a heating temperature of theheat treatment is preferably set to be lower than or equal to thedeposition temperature of the gate insulating layer 406. When such adeposition temperature or a heating temperature is set to be lower thanor equal to the deposition temperature of the gate insulating layer 406,elimination of oxygen from the oxide semiconductor layer 404 can besuppressed.

Next, the gate electrode layer 408 which overlaps with the oxidesemiconductor layer 404 with the gate insulating layer 406 providedtherebetween is formed (see FIG. 2D).

The gate electrode layer 408 can be formed by a plasma-enhanced CVDmethod, a sputtering method, or the like. The gate electrode layer 408can be formed using a metal film containing an element selected frommolybdenum, titanium, tantalum, tungsten, aluminum, copper, chromium,neodymium, and scandium; a metal nitride film containing any of theabove elements as its component (e.g., a titanium nitride film, amolybdenum nitride film, or a tungsten nitride film); or the like can beused. Alternatively, a semiconductor film typified by a polycrystallinesilicon film doped with an impurity element such as phosphorus, or asilicide film such as a nickel silicide film may be used as the gateelectrode layer 408. The gate electrode layer 408 may have asingle-layer structure or a layered structure.

The gate electrode layer 408 can also be formed using a conductivematerial such as indium oxide tin oxide, indium oxide containingtungsten oxide, indium zinc oxide containing tungsten oxide, indiumoxide containing titanium oxide, indium tin oxide containing titaniumoxide, indium oxide zinc oxide, or indium tin oxide to which siliconoxide is added. It is also possible that the gate electrode layer 408has a layered structure of the above conductive material and the abovemetal material.

As one of the layers of the gate electrode layer 408, which is incontact with the gate insulating layer 406, a metal oxide filmcontaining nitrogen, specifically, an In—Ga—Zn—O film containingnitrogen, an In—Sn—O film containing nitrogen, an In—Ga—O filmcontaining nitrogen, an In—Zn—O film containing nitrogen, a Sn—O filmcontaining nitrogen, an In—O film containing nitrogen, or a metalnitride (e.g., InN or SnN) film can be used. Such a film has a workfunction higher than or equal to 5 eV, preferably higher than or equalto 5.5 eV, and the use of this film as the gate electrode layer enablesthe threshold voltage of the transistor to be shifted to the positivedirection. Accordingly, a normally-off switching element can beobtained.

After that, the interlayer insulating layer 410 and the interlayerinsulating layer 412 are formed over the gate insulating layer 406 andthe gate electrode layer 408. Note that although, in this embodiment,the interlayer insulating layer 410 and the interlayer insulating layer412 are stacked over the gate insulating layer 406 and the gateelectrode layer 408, an insulating layer having a single-layer structuremay be provided thereover without limitation of one embodiment of thepresent invention thereto. Alternatively, three or more insulatinglayers may be stacked.

The interlayer insulating layer 410 or the interlayer insulating layer412 can be formed by a plasma-enhanced CVD method, a sputtering method,an evaporation method, or the like. The interlayer insulating layer 410or the interlayer insulating layer 412 can be typically formed using aninorganic insulating film such as a silicon oxide film, a siliconoxynitride film, an aluminum oxynitride film, or a gallium oxide film.

Alternatively, the interlayer insulating layer 410 or the interlayerinsulating layer 412 can be formed using an aluminum oxide film, ahafnium oxide film, a magnesium oxide film, a zirconium oxide film, alanthanum oxide film, a barium oxide film, or a metal nitride film(e.g., an aluminum nitride film).

Note that an aluminum oxide film is preferably provided as theinterlayer insulating layer 410 or the interlayer insulating layer 412.The aluminum oxide film can be preferably used because it has a highshielding effect (blocking effect) which prevents permeance of bothoxygen and impurities such as hydrogen and moisture, and, in and afterthe manufacturing process, the aluminum oxide film functions as aprotective film for preventing entry of an impurity such as hydrogen ormoisture, which causes a change in characteristics, into the oxidesemiconductor layer 404 and release of oxygen, which is a mainconstituent material of the oxide semiconductor, from the oxidesemiconductor layer 404. Thus, when the oxide semiconductor layer 404and/or the base insulating layer 402 in contact therewith include(s) anoxygen-excess region, at least one oxygen-excess region can be providedin the film (bulk) of the oxide semiconductor layer 404 or the interfacebetween the base insulating layer 402 and the oxide semiconductor layer404 by performing a heat treatment in a state where the aluminum oxidefilm is provided.

In this embodiment, an aluminum oxide film is formed as the interlayerinsulating layer 410 and a silicon oxide film is formed as theinterlayer insulating layer 412. Providing an aluminum oxide film havinghigh density (film density: 3.2 g/cm³ or higher, preferably 3.6 g/cm³ orhigher) can stabilize the electric characteristics of the transistor420. The film density can be measured by Rutherford backscatteringspectrometry (RBS) or X-ray reflection (XRR).

Next, openings that reach the oxide semiconductor layer 404 are formedin the interlayer insulating layer 412, the interlayer insulating layer410, and the gate insulating layer 406, and the source electrode layer414 a and the drain electrode layer 414 b are formed over the interlayerinsulating layer 412 so as to fill the openings (see FIG. 2E).

The source electrode layer 414 a and the drain electrode layer 414 b canbe formed using a material and a method which are similar to those ofthe gate electrode layer 408; for example, a metal film containing anelement selected from Al, Cr, Cu, Ta, Ti, Mo, and W or a metal nitridefilm containing any of these elements as its component (e.g., a titaniumnitride film, a molybdenum nitride film, or a tungsten nitride film) canbe used. A metal film having a high melting point such as Ti, Mo, or Wor a metal nitride film of any of these elements (e.g., a titaniumnitride film, a molybdenum nitride film, or a tungsten nitride film) maybe stacked on one of or both of a lower side and an upper side of ametal film of Al or Cu. Alternatively, the source electrode layer 414 aand the drain electrode layer 414 b may be formed using a conductivemetal oxide. As the conductive metal oxide, indium oxide (In₂O₃), tinoxide (SnO₂), zinc oxide (ZnO), indium oxide-tin oxide (ITO), indiumoxide-zinc oxide (In₂O₃—ZnO), or any of these metal oxide materials inwhich silicon oxide is contained can be used.

Through the above-described process, the transistor 420 of thisembodiment can be formed.

Although not illustrated, a planarization insulating layer forplanarization may be provided over the transistor 420. The planarizationinsulating layer can be formed using a heat-resistant organic material,such as polyimide, acrylic, polyimide amide, benzocyclobutene,polyamide, or epoxy. Other than such organic materials, it is alsopossible to use a low-dielectric constant material (low-k material), asiloxane-based resin, phosphosilicate glass (PSG), borophosphosilicateglass (BPSG), or the like. Note that the planarization insulating layermay be formed by stacking a plurality of insulating layers formed usingthese materials.

Alternatively, after the transistor 420 is formed, a heat treatment maybe performed in the air at a temperature higher than or equal to 100° C.and lower than or equal to the deposition temperature of the gateinsulating layer 406, for example, higher than or equal to 100° C. andlower than or equal to 400° C. This heat treatment may be performed at afixed heating temperature; alternatively, the following change in theheating temperature may be conducted plural times: the heatingtemperature is increased from room temperature to a temperature higherthan or equal to 100° C. and lower than or equal to the depositiontemperature of the gate insulating layer 406 and then decreased to roomtemperature. Further, this heat treatment may be performed under areduced pressure. The heat treatment time can be shortened under thereduced pressure. This heat treatment can supply oxygen contained in thebase insulating layer 402 to the oxide semiconductor layer 404, whichenables improvement in the reliability of the semiconductor device.

In the semiconductor device described in this embodiment, thedehydration or dehydrogenation treatment is performed on the baseinsulating layer 402 provided in contact with the oxide semiconductorlayer 404, and the oxygen doping treatment is subsequently performed onthe base insulating layer 402 subjected to the dehydration ordehydrogenation treatment. By formation of the oxide semiconductor layer404 in contact with the base insulating layer 402 whose water andhydrogen contents are decreased and whose oxygen content is increased,oxygen can be supplied to the oxide semiconductor layer 404 while entryof the water and hydrogen into the oxide semiconductor layer 404 issuppressed.

Thus, an oxygen-excess region can be formed in the oxide semiconductorlayer 404 and/or at the interface between the oxide semiconductor layer404 and the base insulating layer 402. Accordingly, since the density ofoxygen vacancies in the oxide semiconductor layer, which cause the shiftof the threshold voltage to the negative direction, can be reduced,variation in the threshold voltage of the transistor 420 can be reducedand a normally-off transistor can be achieved. Further, the subthresholdvalue (S value) of the transistor 420 can be reduced.

In addition, in the semiconductor device described in this embodiment,since the oxygen doping treatment is performed on the base insulatinglayer 402 in contact with the oxide semiconductor layer 404 providedthereon, the oxide semiconductor layer 404 can have higher film qualityand/or crystallinity than the oxide semiconductor layer 404 which isdirectly subjected to an oxygen doping treatment. Particularly in thecase where the oxide semiconductor layer 404 is a CAAC-OS film, which issubjected to an oxygen doping treatment, crystallinity of the CAAC-OSfilm deteriorates in some cases; therefore, it is effective to apply themethod for manufacturing a semiconductor device, which is described inthis embodiment.

The methods and structures described in this embodiment can be combinedas appropriate with any of the methods and structures described in theother embodiments.

Embodiment 2

In this embodiment, a structure and a manufacturing method of asemiconductor device according to one embodiment of the disclosedinvention, which are different from those of Embodiment 1, will bedescribed with reference to FIGS. 3A to 3C, FIGS. 4A to 4E, FIGS. 5A to5C, and FIGS. 6A to 6C. Note that the same portion as or a portionhaving a function similar to those in the above embodiment can be formedin a manner similar to that described in the above embodiment, and alsothe steps similar to those in the above embodiment can be performed in amanner similar to that described in the above embodiment, anddescription thereof is not repeated. In addition, detailed descriptionof the same portions is not repeated.

FIGS. 3A to 3C illustrate a structural example of a transistor 422. FIG.3A is a plan view of the transistor 422, FIG. 3B is a cross-sectionalview taken along the line X2-Y2 in FIG. 3A, and FIG. 3C is across-sectional view taken along the line V2-W2 in FIG. 3A. Note that inFIG. 3A, some components of the transistor 422 (e.g., the interlayerinsulating layer 412) are not illustrated for clarity.

The transistor 422 illustrated in FIGS. 3A to 3C includes the baseinsulating layer 402 provided over the substrate 400, an oxidesemiconductor layer 404 which is provided over the base insulating layer402 and includes a pair of low-resistance regions 404 a and 404 b and achannel formation region 404 c, the gate insulating layer 406 providedover the oxide semiconductor layer 404, the gate electrode layer 408which overlaps with the channel formation region 404 c with the gateinsulating layer 406 provided therebetween, the source electrode layer414 a and the drain electrode layer 414 b electrically connected to theoxide semiconductor layer 404, and a wiring layer 416 a electricallyconnected to the source electrode layer 414 a and a wiring layer 416 belectrically connected to the drain electrode layer 414 b. In addition,the transistor 422 may further include, as its components, theinterlayer insulating layer 410 and the interlayer insulating layer 412which are provided over the gate electrode layer 408.

An example of a method for manufacturing the transistor 422 of thisembodiment will be described below with reference to FIGS. 4A to 4E,FIGS. 5A to 5C, and FIGS. 6A to 6C.

First, the base insulating layer 402 is formed over the substrate 400having an insulating surface, and then a treatment for introducingoxygen 431 a is performed on the base insulating layer 402 (see FIG.4A). At least any of an oxygen radical, ozone, an oxygen atom, and anoxygen ion (including a molecular ion and a cluster ion) is included inthe oxygen 431 a. By introduction of oxygen 431 a into the baseinsulating layer 402 before a dehydration or dehydrogenation treatment,a bond between hydrogen and an element included in the base insulatinglayer 402 (e.g., silicon) or a bond between a hydroxyl group and theelement are cleaved, the hydrogen or hydroxyl group reacts with oxygen,and then water is generated. Accordingly, hydrogen or a hydroxyl groupcontained in the base insulating layer 402 can be eliminated easily aswater by the dehydration or dehydrogenation treatment which will beperformed on the base insulating layer 402 after introduction of theoxygen 431 a. Further, in the dehydration or dehydrogenation treatment,the temperature can be lowered or the processing time can be shortened.

The conditions in the introduction step of the oxygen 431 in Embodiment1 can be referred to for those of the oxygen 431 a.

Note that atoms (or ions) to be introduced into the base insulatinglayer 402 are not necessarily those of oxygen because the purpose of theoxygen doping treatment is to cleave a bond between hydrogen (or ahydroxyl group) and an element included in the base insulating layer402. For example, instead of the oxygen 431 a, a rare gas such as argonmay be introduced.

Next, a heat treatment for the purpose of the dehydration ordehydrogenation treatment is performed on the base insulating layer 402into which the oxygen 431 a is introduced. The temperature of the heattreatment is higher than or equal to 250° C. and lower than or equal tothe strain point of the substrate.

Next, oxygen 431 b is introduced into the base insulating layer 402subjected to the dehydration or dehydrogenation treatment to compensateoxygen which has eliminated from the base insulating layer 402 by thedehydration or dehydrogenation treatment (see FIG. 4B). In detail, theintroduction step of the oxygen 431 b can be performed in a mannersimilar to that of the oxygen 431 in Embodiment 1.

Note that the dehydration or dehydrogenation treatment and/or the oxygendoping treatment may be performed plural times on the base insulatinglayer 402.

Next, an oxide semiconductor layer 403 is formed over the baseinsulating layer 402 in a manner similar to that of Embodiment 1 (seeFIG. 4C).

Further, after the oxide semiconductor layer 403 is formed, the oxidesemiconductor layer 403 is preferably subjected to a heat treatment forremoving (dehydrating or dehydrogenating) excess hydrogen (includingwater and a hydroxyl group) contained therein. The temperature of theheat treatment is higher than or equal to 300° C. and lower than orequal to 700° C., or lower than the strain point of the substrate. Theheat treatment can be performed under reduced pressure, a nitrogenatmosphere, or the like.

Hydrogen, which is an impurity imparting n-type conductivity, can beremoved from the oxide semiconductor by this heat treatment. Forexample, the hydrogen concentration in the oxide semiconductor layer 403after the dehydration or dehydrogenation treatment can be lower than orequal to 5×10¹⁹/cm³, preferably lower than or equal to 5×10¹⁸/cm³. Bythis heat treatment, oxygen contained in the base insulating layer 402can be supplied to the oxide semiconductor layer 403. Oxygen vacanciesof the oxide semiconductor layer 403, which are caused due toelimination of oxygen by the dehydration or dehydrogenation treatmentperformed on the oxide semiconductor layer 403, which occurs at the sametime, can be compensated by supply of oxygen from the base insulatinglayer 402.

Note that the heat treatment for the dehydration or dehydrogenation,which is performed on the oxide semiconductor layer 403, is preferablyperformed before the oxide semiconductor layer 403 is processed into theoxide semiconductor layer 404 having an island shape, in which caserelease of oxygen contained in the base insulating layer 402 by the heattreatment can be prevented.

The heat treatment for dehydration or dehydrogenation may serve asanother heat treatment of a manufacturing process of the transistor 422.

Note that in the heat treatment, it is preferable that moisture,hydrogen, and the like be not contained in nitrogen or a rare gas suchas helium, neon, or argon. Alternatively, the purity of nitrogen or arare gas such as helium, neon, or argon which is introduced into theheat treatment apparatus is preferably set to be higher than or equal to6N (99.9999%), more preferably higher than or equal to 7N (99.99999%)(i.e., the concentration of impurities is lower than or equal to 1 ppm,preferably lower than or equal to 0.1 ppm).

In addition, after the oxide semiconductor layer 403 is heated by theheat treatment, a high-purity oxygen gas, a high-purity dinitrogenmonoxide gas, or ultra dry air (the moisture amount is less than orequal to 20 ppm (−55° C. by conversion into a dew point), preferablyless than or equal to 1 ppm, more preferably less than or equal to 10ppb, in the measurement with the use of a dew point meter of a cavityring down laser spectroscopy (CRDS) system) may be introduced into thesame furnace while the heating temperature is being maintained or beinggradually decreased. It is preferable that water, hydrogen, or the likebe not contained in the oxygen gas or the dinitrogen monoxide gas. Thepurity of the oxygen gas or the dinitrogen monoxide gas which isintroduced into the heat treatment apparatus is preferably higher thanor equal to 6N, more preferably higher than or equal to 7N (i.e., theimpurity concentration in the oxygen gas or the dinitrogen monoxide gasis preferably lower than or equal to 1 ppm, more preferably lower thanor equal to 0.1 ppm). The oxygen gas or the dinitrogen monoxide gas actsto supply oxygen that is a main component of the oxide semiconductor andthat is reduced by the step for removing an impurity by the dehydrationor dehydrogenation treatment, so that the oxide semiconductor layer 403can be a high-purified and i-type (intrinsic) oxide semiconductor layer.

Next, after the oxide semiconductor layer 403 is processed into theoxide semiconductor layer 404 having an island shape, the gateinsulating layer 406 is formed over the oxide semiconductor layer 404(see FIG. 4D).

Note that the gate electrode layer 408 can be formed by processing aconductive film (not illustrated) provided over the gate insulatinglayer 406 with the use of a mask. Here, as the mask used for processing,it is preferable to use a mask having a finer pattern which is formed byperforming a slimming process on a mask formed by a photolithographymethod or the like.

As the slimming process, an ashing process in which oxygen in a radicalstate (an oxygen radical) is used can be employed, for example. However,the slimming process is not limited to the ashing process as long as themask formed by a photolithography method or the like can be processedinto a finer pattern. Note that the channel length (L) of a transistoris determined by the mask formed by the slimming process; therefore, aprocess with high controllability can be employed as the slimmingprocess.

As a result of the slimming process, the line width of the mask formedby a photolithography method or the like can be reduced to a lengthshorter than or equal to the resolution limit of a light exposureapparatus, preferably less than or equal to half of the resolution limitof a light exposure apparatus, more preferably less than or equal to onethird of the resolution limit of the light exposure apparatus. Forexample, the line width can be greater than or equal to 30 nm and lessthan or equal to 2000 nm, preferably greater than or equal to 50 nm andless than or equal to 350 nm. This enables further miniaturization ofthe transistor.

Next, the pair of low-resistance regions 404 a and 404 b is formed byintroduction of a dopant 433 into the oxide semiconductor layer 404,using the gate electrode layer 408 as a mask. Thus, the oxidesemiconductor layer 404 in which the pair of low-resistance regions isformed with the channel formation region 404 c provided therebetween isformed by the introduction of the dopant 433 (see FIG. 4E)

The dopant 433 can be introduced by an ion implantation method, an iondoping method, a plasma immersion ion implantation method, or the like.In the case where the above method is used, it is preferable to use asingle ion, a fluoride ion, or a chloride ion of the dopant 433.

The introduction of the dopant 433 may be controlled by setting theimplantation conditions such as the acceleration voltage and the dosage,or the thickness of the films through which the dopant passes, asappropriate. The dosage of the dopant 433 is set to be greater than orequal to 1×10¹³ ions/cm² and less than or equal to 5×10¹⁶ ions/cm², forexample. The concentration of the dopant 433 in the pair oflow-resistance regions is preferably greater than or equal to 5×10¹⁸/cm³and less than or equal to 1×10²²/cm³.

The dopant 433 may be introduced while the substrate 400 is heated.

The dopant 433 may be introduced into the oxide semiconductor layer 404plural times, and a plurality of kinds of dopant may be used.

Further, a heat treatment may be performed thereon after theintroduction of the dopant 433. The heat treatment is preferablyperformed at a temperature(s) higher than or equal to 300° C. and lowerthan or equal to the deposition temperature of the gate insulating layer406, more preferably higher than or equal to 300° C. and lower than orequal to 450° C., under an oxygen atmosphere for an hour. The heattreatment may be performed under a nitrogen atmosphere, reducedpressure, or the air (ultra-dry air).

In the case where the oxide semiconductor layer 404 is a CAAC-OS film,part of the oxide semiconductor layer 404 may become amorphous by theintroduction of the dopant 433. In this case, the crystallinity of theoxide semiconductor layer 404 can be recovered by performing the heattreatment thereon after the introduction of the dopant 433.

After that, the interlayer insulating layer 410 and the interlayerinsulating layer 412 are formed over the gate insulating layer 406 andthe gate electrode layer 408 (see FIG. 5A).

Next, a mask 440 is formed over the interlayer insulating layer 412; andthe interlayer insulating layer 412, the interlayer insulating layer410, and the gate insulating layer 406 are etched with the use of themask 440, so that an opening 442 which reaches the oxide semiconductorlayer 404 (specifically, the low-resistance region 404 a) is formed (seeFIG. 5B).

The mask 440 can be formed by a photolithography method or the likeusing a material such as a photoresist. For light exposure at the timeof forming the mask 440, extreme ultraviolet light having a wavelengthas short as several nanometers to several tens of nanometers ispreferably used. In the light exposure by extreme ultraviolet light, theresolution is high and the focus depth is large. Thus, the mask 440having a fine pattern can be formed.

As long as the mask 440 having a sufficiently fine pattern can beformed, a different method such as an ink-jet method may be used to formthe mask 440. In this case, it is unnecessary to use a photosensitivematerial such as a photoresist as a material of the mask 440.

After the mask 440 is removed, a mask 444 is formed in the opening 442and over the interlayer insulating layer 412. The mask 444 can be formedin a manner similar to that of the mask 440. The interlayer insulatinglayer 412, the interlayer insulating layer 410, and the gate insulatinglayer 406 are etched with the use of the mask 444, so that an opening446 which reaches the oxide semiconductor layer 404 (specifically, thelow-resistance region 404 b) is formed (see FIG. 5C). Thus, the openingsbetween which the gate electrode layer 408 is provided is formed in thegate insulating layer 406, the interlayer insulating layer 410, and theinterlayer insulating layer 412.

Next, a conductive film 414 to be the source electrode layer and thedrain electrode layer is formed over the interlayer insulating layer 412to be embedded in the opening 442 and the opening 446 (see FIG. 6A).

The conductive film 414 is formed using a material that can withstand aheat treatment performed later. For example, a metal film containing anelement selected from Al, Cr, Cu, Ta, Ti, Mo, and W or a metal nitridefilm containing any of the above elements as a component (e.g., atitanium nitride film, a molybdenum nitride film, or a tungsten nitridefilm) can be used. A metal film having a high melting point such as Ti,Mo, or W or a metal nitride film of any of these elements (e.g., atitanium nitride film, a molybdenum nitride film, or a tungsten nitridefilm) may be stacked on one of or both of a lower side and an upper sideof a metal film of Al or Cu. Further alternatively, the conductive filmused for the source electrode layer and the drain electrode layer may beformed using a conductive metal oxide. As the conductive metal oxide,indium oxide (In₂O₃), tin oxide (SnO₂), zinc oxide (ZnO), ITO, indiumoxide-zinc oxide (In₂O₃—ZnO), or any of these metal oxide materials inwhich silicon oxide is contained can be used.

Next, a CMP treatment is performed on the conductive film 414 (see FIG.6B). The CMP treatment is performed on the conductive film 414 in orderto remove the conductive film 414 provided over the interlayerinsulating layer 412 (at least a region which is overlapped with thegate electrode layer 408), whereby the source electrode layer 414 a andthe drain electrode layer 414 b embedded in the opening 442 and theopening 446, respectively, can be formed. In this embodiment, throughthe CMP treatment performed on the conductive film 414 under suchconditions that the surface of the interlayer insulating layer 412 canbe exposed, the source electrode layer 414 a and the drain electrodelayer 414 b are formed. Note that the surface of the interlayerinsulating layer 412, the surface of the interlayer insulating layer410, or the surface of the gate electrode layer 408 may also be polisheddepending on the conditions of the CMP treatment.

The CMP treatment is a method for planarizing a surface of an object tobe processed by a combination of chemical and mechanical actions. Morespecifically, the CMP treatment is a method in which a polishing clothis attached to a polishing stage, the polishing stage and an object tobe processed are each rotated or swung while a slurry (an abrasive) issupplied between the object to be processed and the polishing cloth, andthe surface of the object to be processed is polished by a chemicalreaction between the slurry and the surface of the object to beprocessed and by a mechanical polishing action of the polishing cloth onthe object to be processed.

Note that the CMP treatment may be performed only once or plural times.When the CMP treatment is performed plural times, it is preferable thatfirst polishing be performed at a high polishing rate and finalpolishing be performed at a low polishing rate. By performing polishingat different polishing rates in combination, the surfaces of the sourceelectrode layer 414 a, the drain electrode layer 414 b, and theinterlayer insulating layer 412 can be further improved.

Note that in this embodiment, the CMP treatment is used for removing theconductive film 414 in the region which is overlapped with theinterlayer insulating layer 412; however, another polishing (grinding orcutting) treatment may be used. Alternatively, the polishing treatmentsuch as the CMP treatment may be combined with an etching (dry etchingor wet etching) treatment, a plasma treatment, or the like. For example,after the CMP treatment, a dry etching treatment or a plasma treatment(reverse sputtering or the like) may be performed to improve theplanarity of the surface to be processed. In the case where thepolishing treatment is combined with an etching treatment, a plasmatreatment or the like, the order of the steps is not particularlylimited, and may be set as appropriate depending on the material,thickness, and roughness of the surface of the conductive film 414.

As described above, the source electrode layer 414 a or the drainelectrode layer 414 b is provided to be embedded in the opening providedin the gate insulating layer 406, the interlayer insulating layer 410,and the interlayer insulating layer 412. Therefore, in the transistor422, a distance between the gate electrode layer 408 and a region wherethe source electrode layer 414 a is in contact with the oxidesemiconductor layer 404 (a source side contact region) is determined bya width between an end portion of the opening 442 and an end portion ofthe gate electrode layer 408. In the same manner, in the transistor 422,a distance between the gate electrode layer 408 and a region where thedrain electrode layer 414 b is in contact with the oxide semiconductorlayer 404 (a drain side contact region) is determined by a width betweenan end portion of the opening 446 and an end portion of the gateelectrode layer 408.

In the case where the opening 442 for providing the source electrodelayer 414 a and the opening 446 for providing the drain electrode layer414 b are formed by performing an etching treatment once, the minimumfeature size of a width between the opening 442 and the opening 446 inthe channel length direction is limited to a resolution limit of alight-exposure apparatus used for forming a mask. Therefore, it isdifficult to reduce a distance between the opening 442 and the opening446 sufficiently, so that it is also difficult to reduce distancesbetween the source side contact region and the gate electrode layer 408,and between the drain side contact region and the gate electrode layer408.

However, in the manufacturing method described in this embodiment, theopening 442 and the opening 446 are formed separately by differentetching treatments using different masks; therefore, the position of theopenings can be set freely without depending on the resolution limit ofa light-exposure apparatus. Thus, the distance between the source sidecontact region or the drain side contact region and the gate electrodelayer 408 can be reduced to greater than or equal to 0.05 μm and lessthan or equal to 0.1 μm, for example. By reducing the distances betweenthe source side contact region and the gate electrode layer 408, andbetween the drain side contact region and the gate electrode layer 408,the resistance between the source and the drain of the transistor 422can be reduced, so that the electric characteristics of the transistor(e.g., on-state current characteristics) can be improved.

Further, in the step of removing the conductive film 405 over theinterlayer insulating layer 412 for forming the source electrode layer414 a and the drain electrode layer 414 b, an etching treatment using aresist mask is not performed, so that the conductive film 405 can beprocessed minutely and precisely even in the case where the widthbetween the source electrode layer 414 a and the drain electrode layer414 b in the channel length direction is narrowed. Thus, in themanufacturing process of the semiconductor device, the transistor 420having little variation in shapes and characteristics and a minutestructure can be fabricated with a high yield.

Next, a conductive film to be a source wiring layer or a drain wiringlayer (including a wiring formed in the same layer as the wiring layers)is formed over the source electrode layer 414 a, the drain electrodelayer 414 b, and the interlayer insulating layer 412 and is processed,so that the source wiring layer 416 a and the drain wiring layer 416 bare formed (see FIG. 6C).

The wiring layer 416 a and the wiring layer 416 b can be formed using amaterial and a method similar to those of the gate electrode layer 408.

As described above, the width between the source electrode layer 414 aand the drain electrode layer 414 b in the channel length direction canbe processed minutely without depending on the resolution limit of alight-exposure apparatus. On the other hand, the wiring layer 416 a andthe wiring layer 416 b are processed using a mask formed by aphotolithography method; therefore, the width between the wiring layer416 a and the wiring layer 416 b becomes longer than that between thesource electrode layer 414 a and the drain electrode layer 414 b. Forminiaturizing the transistor 420, the width between the wiring layer 416a and the wiring layer 416 b is preferably set in accordance with theresolution limit of a light-exposure apparatus.

Through the above-described process, the transistor 422 of thisembodiment can be formed.

In the semiconductor device described in this embodiment, a first oxygendoping treatment is performed so as to cleave a bond between an elementincluded in the base insulating layer 402 and hydrogen (or a hydroxylgroup), and a dehydration or dehydrogenation treatment is subsequentlyperformed on the base insulating layer 402, which enables the processingtemperature to be lowered or the processing time to be shortened.Further, the base insulating layer 402 whose water and hydrogen contentsare decreased and whose oxygen content is increased can be obtained by asecond oxygen doping treatment performed on the base insulating layer402 subjected to the dehydration or dehydrogenation treatment. Byformation of the oxide semiconductor layer 404 in contact with the baseinsulating layer 402, oxygen can be supplied to the oxide semiconductorlayer 404 while entry of the water and hydrogen into the oxidesemiconductor layer 404 is suppressed.

Thus, an oxygen-excess region can be formed in the oxide semiconductorlayer 404 and/or at the interface between the oxide semiconductor layer404 and the base insulating layer 402. Accordingly, since the density ofoxygen vacancies in the oxide semiconductor layer, which cause the shiftof the threshold voltage to the negative direction, can be reduced,variation in the threshold voltage of the transistor 422 can be reducedand a normally-off transistor can be achieved. Further, the subthresholdvalue (S value) of the transistor 422 can be reduced.

In addition, in the semiconductor device described in this embodiment,since the oxygen doping treatment is performed on the base insulatinglayer 402 in contact with the oxide semiconductor layer 404 providedthereon, the oxide semiconductor layer 404 can have higher film qualityand/or crystallinity than the oxide semiconductor layer 404 which isdirectly subjected to an oxygen doping treatment. Particularly in thecase where the oxide semiconductor layer 404 is a CAAC-OS film, which issubjected to an oxygen doping treatment, crystallinity of the CAAC-OSfilm deteriorates in some cases; therefore, it is effective to apply themethod for manufacturing a semiconductor device, which is described inthis embodiment.

The methods and structures described in this embodiment can be combinedas appropriate with any of the methods and structures described in theother embodiments.

Embodiment 3

In this embodiment, an example of a semiconductor device including thetransistor described in this specification, which can hold stored dataeven when not powered and which does not have a limitation on the numberof write cycles, will be described with reference to drawings.

FIGS. 7A to 7C illustrate an example of a structure of the semiconductordevice. FIG. 7A is a cross-sectional view of the semiconductor device,FIG. 7B is a plan view of the semiconductor device, and FIG. 7C is acircuit diagram of the semiconductor device. Here, FIG. 7A correspondsto a cross section taken along the line C1-C2 and the line D1-D2 in FIG.7B.

The semiconductor device illustrated in FIGS. 7A and 7B includes atransistor 160 including a first semiconductor material in a lowerportion, and a transistor 162 including a second semiconductor materialin an upper portion. Here, the structure of the transistor 420 describedin Embodiment 1 is applied to the transistor 162.

Here, the first semiconductor material and the second semiconductormaterial are preferably materials having different band gaps. Forexample, the first semiconductor material may be a semiconductormaterial other than an oxide semiconductor (e.g., silicon) and thesecond semiconductor material may be an oxide semiconductor. Atransistor including a material other than an oxide semiconductor canoperate at high speed easily. On the other hand, a transistor includingan oxide semiconductor enables holding of charge for a long time owingto its characteristics.

Although all the transistors are n-channel transistors here, p-channeltransistors may be applied. Further, as long as a transistor like thatdescribed in Embodiment 1 or Embodiment 2, each including an oxidesemiconductor for holding data, is used, it is not necessary to limit aspecific structure of the semiconductor device, such as a material ofthe semiconductor device or a structure of the semiconductor device, tothe structure described here.

The transistor 160 in FIG. 7A includes a channel formation region 116provided in a substrate 185 including a semiconductor material (e.g.,silicon), impurity regions 120 so that the channel formation region 116is provided therebetween, intermetallic compound regions 124 in contactwith the impurity regions 120, a gate insulating film 108 provided overthe channel formation region 116, and a gate electrode layer 110provided over the gate insulating film 108. Note that a transistor whosesource electrode layer and drain electrode layer are not illustrated ina drawing may also be referred to as a transistor for the sake ofconvenience. Further, in such a case, in description of a connection ofa transistor, a source region and a source electrode layer arecollectively referred to as a “source electrode layer”, and a drainregion and a drain electrode layer are collectively referred to as a“drain electrode layer”. That is, in this specification, the term“source electrode layer” may include a source region.

An element isolation insulating layer 106 is provided over the substrate185 to surround the transistor 160. An insulating layer 128 and aninsulating layer 130 are provided to cover the transistor 160. Note thatthe insulating layer 130 functions as a base insulating layer of thetransistor 162. Note that in the transistor 160, a sidewall insulatinglayer may be formed on a side surface of the gate electrode layer 110,and the impurity regions 120 may include a region having a differentimpurity concentration.

The transistor 160 formed using a single crystal semiconductor substratecan operate at high speed. Thus, when the transistor is used as areading transistor, data can be read at a high speed. Two insulatingfilms are formed so as to cover the transistor 160. As a treatment priorto formation of the transistor 162 and a capacitor 164, a CMP treatmentis performed on the two insulating films, whereby the insulating layer128 and the insulating layer 130 which are planarized are formed and, atthe same time, an upper surface of the gate electrode layer 110 isexposed.

As the insulating layer 128 and the insulating layer 130, typically, aninorganic insulating film such as a silicon oxide film, a siliconoxynitride film, an aluminum oxide film, an aluminum oxynitride film, asilicon nitride film, an aluminum nitride film, a silicon nitride oxidefilm, or an aluminum nitride oxide film can be used. The insulatinglayer 128 and the insulating layer 130 can be formed by aplasma-enhanced CVD method, a sputtering method, or the like, and arepreferably formed by a plasma-enhanced CVD method.

Note that in this embodiment, a silicon nitride film is used as theinsulating layer 128 and a silicon oxide film is used as the insulatinglayer 130.

A planarization treatment is preferably performed on the surface of theinsulating layer 130, on which an oxide semiconductor layer 144 is to beformed. In this embodiment, the oxide semiconductor layer 144 is formedover the insulating layer 130 which is planarized sufficiently(preferably, an average surface roughness of the insulating layer 130 isless than or equal to 0.15 nm) by a polishing treatment (e.g., a CMPtreatment).

Since the insulating layer 130 functions as a base insulating layer ofthe transistor 162, after the formation of the insulating layer 130, adehydration or dehydrogenation treatment and a subsequent oxygen dopingtreatment are performed at least once on the insulating layer 130. Thus,on the surface of the base insulating layer whose water and hydrogencontents are decreased and whose oxygen content is increased, the oxidesemiconductor layer 144 can be formed. Moreover, the reliability of thetransistor 162 including the oxide semiconductor layer 144 provided overthe insulating layer 130 can be improved.

The dehydration or dehydrogenation treatment and the subsequent oxygendoping treatment which are performed on the insulating layer 130 may beperformed before or after the step of exposing the gate electrode layer110 of the transistor 160, or the both. Alternatively, the followingorder may be employed: the dehydration or dehydrogenation treatment isperformed on the insulating layer 130, the gate electrode layer 110 isexposed, and then the oxygen doping treatment is performed thereon. Notethat at the time of performing the oxygen doping treatment on theinsulating layer 130, it is preferable to use a mask covering a regionwhich overlaps with the gate electrode layer 110. In the case where theoxygen doping treatment is performed before the step of exposing thegate electrode layer 110, the condition for the oxygen introduction iscontrolled so that oxygen is introduced into a region below the regionpolished by a CMP treatment.

The transistor 162 illustrated in FIG. 7A includes an oxidesemiconductor in a channel formation region and a gate electrode layer148 which overlaps with the oxide semiconductor layer 144 with a gateinsulating layer 146 provided therebetween. Here, it is preferable thatthe oxide semiconductor layer 144 included in the transistor 162 behighly purified. By using a highly purified oxide semiconductor, thetransistor 162 can have extremely favorable off-state currentcharacteristics.

Since the off-state current of the transistor 162 is small, stored datacan be held for a long time owing to such a transistor. In other words,power consumption can be sufficiently reduced because a semiconductorstorage device in which refresh operation is unnecessary or thefrequency of refresh operation is extremely low can be provided.

An insulating layer 135 and an insulating layer 138 each having asingle-layer structure or a layered structure are provided over thetransistor 162. In this embodiment, an aluminum oxide film is used asthe insulating layer 135. Providing an aluminum oxide film having highdensity (film density: 3.2 g/cm³ or higher, preferably 3.6 g/cm³ orhigher) can stabilize the electric characteristics of the transistor162.

In addition, an electrode layer 142 a and an electrode layer 142 b whichare in contact with the oxide semiconductor layer 144 through openingsprovided in the gate insulating layer 146, the insulating layer 135, andthe insulating layer 138 are formed. The electrode layer 142 a and theelectrode layer 142 b each function as a source electrode layer or adrain electrode layer of the transistor 162.

Further, an insulating layer 150 having a single-layer structure or alayered structure is provided over the electrode layer 142 a and theelectrode layer 142 b. Furthermore, a conductive layer 153 is providedin a region which overlaps with the electrode layer 142 a of thetransistor 162 with the insulating layer 150 provided therebetween, andthe electrode layer 142 a, the insulating layer 150, and the conductivelayer 153 form the capacitor 164. That is, the electrode layer 142 a ofthe transistor 162 functions as one electrode of the capacitor 164, andthe conductive layer 153 functions as the other electrode of thecapacitor 164. Note that the capacitor 164 may be omitted if a capacitoris not needed. Alternatively, the capacitor 164 may be separatelyprovided above the transistor 162.

An insulating layer 152 is provided over the transistor 162 and thecapacitor 164. In addition, a wiring 156 for connecting the transistor162 to another transistor is provided over the insulating layer 152.Although not illustrated in FIG. 7A, the wiring 156 is electricallyconnected to the electrode layer 142 b through an opening provided inthe insulating layer 150, the insulating layer 152, and the like (orthrough an electrode layer formed in the opening).

In FIGS. 7A and 7B, the transistor 160 and the transistor 162 areprovided so as to at least partly overlap each other, and a sourceregion or a drain region of the transistor 160 is preferably provided topartly overlap with the oxide semiconductor layer 144. In addition, thetransistor 162 and the capacitor 164 are provided so as to overlap withat least part of the transistor 160. For example, the conductive layer153 of the capacitor 164 is provided to at least partly overlap with thegate electrode layer 110 of the transistor 160. When such a planarlayout is employed, the area occupied by the semiconductor device can bereduced; thus, the degree of integration can be increased.

Next, an example of a circuit configuration corresponding to FIGS. 7Aand 7B is illustrated in FIG. 7C.

In FIG. 7C, a first wiring (1st Line) is electrically connected to asource electrode layer of the transistor 160, and a second wiring (2ndLine) is electrically connected to a drain electrode layer of thetransistor 160. A third wiring (3rd Line) and one of the sourceelectrode layer and the drain electrode layer of the transistor 162 areelectrically connected to each other, and a fourth wiring (4th Line) andthe gate electrode layer of the transistor 162 are electricallyconnected to each other. The gate electrode layer of the transistor 160and the other of the source electrode layer and the drain electrodelayer of the transistor 162 are electrically connected to one electrodeof the capacitor 164. A fifth wiring (5th Line) is electricallyconnected to the other electrode of the capacitor 164.

The semiconductor device illustrated in FIG. 7C utilizes acharacteristic in which the potential of the gate electrode layer of thetransistor 160 can be held, and thus enables data writing, holding, andreading as follows.

Writing and holding of data will be described. First, the potential ofthe fourth wiring is set to a potential at which the transistor 162 isturned on, so that the transistor 162 is turned on. Accordingly, thepotential of the third wiring is supplied to the gate electrode layer ofthe transistor 160 and to the capacitor 164. That is, predeterminedcharge is given to the gate electrode layer of the transistor 160(writing). Here, one of two kinds of charge providing differentpotentials (hereinafter referred to as a low-level charge and ahigh-level charge) is given. After that, the potential of the fourthwiring is set to a potential at which the transistor 162 is turned off,so that the transistor 162 is turned off. Thus, the charge given to thegate electrode layer of the transistor 160 is held (storing).

Since the off-state current of the transistor 162 is extremely low, thecharge of the gate electrode layer of the transistor 160 is held for along time.

Next, reading of data will be described. By supplying an appropriatepotential (a reading potential) to the fifth wiring while apredetermined potential (a constant potential) is supplied to the firstwiring, the potential of the second wiring varies depending on theamount of charge held in the gate electrode layer of the transistor 160.This is because in general, when the transistor 160 is an n-channeltransistor, an apparent threshold voltage V_(th) _(—) _(H) in the casewhere a high-level charge is given to the gate electrode layer of thetransistor 160 is lower than an apparent threshold voltage V_(th) _(—)_(L) in the case where a low-level charge is given to the gate electrodelayer of the transistor 160. Here, an apparent threshold voltage refersto the potential of the fifth wiring, which is needed to turn on thetransistor 160. Thus, the potential of the fifth wiring is set to apotential V₀ which is between V_(th) _(—) _(H) and V_(th) _(—) _(L),whereby charge given to the gate electrode layer of the transistor 160can be determined. For example, in the case where a high-level charge isgiven in writing, when the potential of the fifth wiring is set to V₀(>V_(th) _(—) _(H)), the transistor 160 is turned on. In the case wherea low-level charge is given in writing, even when the potential of thefifth wiring is set to V₀ (<V_(th) _(—) _(L)), the transistor 160remains in an off state. Therefore, the stored data can be read by thepotential of the second wiring.

Note that in the case where memory cells are arrayed to be used, onlydata of desired memory cells needs to be read. In the case where suchreading is not performed, a potential at which the transistor 160 isturned off regardless of the state of the gate electrode layer thereof,that is, a potential smaller than V_(th) _(—) _(H) may be given to thefifth wiring. Alternatively, a potential at which the transistor 160 isturned on regardless of the state of the gate electrode layer thereof,that is, a potential higher than V_(th) _(—) _(L) may be applied to thefifth wiring.

When a transistor having a channel formation region formed using anoxide semiconductor and having extremely low off-state current isapplied to the semiconductor device in this embodiment, thesemiconductor device can hold stored data for an extremely long period.In other words, power consumption can be sufficiently reduced becauserefresh operation becomes unnecessary or the frequency of refreshoperation can be extremely low. Moreover, stored data can be held for along period even when power is not supplied (note that a potential ispreferably fixed).

Further, in the semiconductor device described in this embodiment, highvoltage is not needed for writing data and there is no problem ofdeterioration of elements. For example, unlike a conventionalnonvolatile memory, it is not necessary to inject and extract electronsinto and from a floating gate; thus, a problem such as deterioration ofa gate insulating layer does not arise at all. In other words, thesemiconductor device according to the disclosed invention does not havea limitation on the number of write cycles, which has been problematicin a conventional nonvolatile memory, and reliability thereof isdrastically improved. Furthermore, data is written depending on the onstate or the off state of the transistor, whereby high-speed operationcan be easily achieved.

As described above, a miniaturized and highly-integrated semiconductordevice having high electric characteristics and a method formanufacturing the semiconductor device can be provided.

The methods and structures described in this embodiment can be combinedas appropriate with any of the methods and structures described in theother embodiments.

Embodiment 4

In this embodiment, a semiconductor device including the transistordescribed in Embodiment 1 or 2, which can hold stored data even when notpowered, which does not have a limitation on the number of write cycles,and which has a structure different from the structure described inEmbodiment 3 will be described with reference to FIGS. 8A and 8B andFIGS. 9A and 9B.

FIG. 8A illustrates an example of a circuit configuration of thesemiconductor device, and FIG. 8B is a conceptual diagram illustratingan example of the semiconductor device. First, the semiconductor deviceillustrated in FIG. 8A will be described, and then, the semiconductordevice illustrated in FIG. 8B will be described.

In the semiconductor device illustrated in FIG. 8A, a bit line BL iselectrically connected to the source electrode layer or the drainelectrode layer of the transistor 162, a word line WL is electricallyconnected to the gate electrode layer of the transistor 162, and thesource electrode layer or the drain electrode layer of the transistor162 is electrically connected to a first terminal of a capacitor 254.

Next, writing and holding of data in the semiconductor device (a memorycell 250) illustrated in FIG. 8A will be described.

First, the potential of the word line WL is set to a potential at whichthe transistor 162 is turned on, so that the transistor 162 is turnedon. Accordingly, the potential of the bit line BL is supplied to thefirst terminal of the capacitor 254 (writing). After that, the potentialof the word line WL is set to a potential at which the transistor 162 isturned off, so that the transistor 162 is turned off. Thus, thepotential of the first terminal of the capacitor 254 is held (holding).

The transistor 162 including an oxide semiconductor has extremely lowoff-state current. For that reason, a potential of the first terminal ofthe capacitor 254 (or a charge accumulated in the capacitor 254) can beheld for an extremely long period by turning off the transistor 162.

Next, reading of data will be described. When the transistor 162 isturned on, the bit line BL which is in a floating state and thecapacitor 254 are electrically connected to each other, and the chargeis redistributed between the bit line BL and the capacitor 254. As aresult, the potential of the bit line BL is changed. The amount ofchange in potential of the bit line BL varies depending on the potentialof the first terminal of the capacitor 254 (or the charge accumulated inthe capacitor 254).

For example, the potential of the bit line BL after chargeredistribution is (C_(B)×V_(B0)+C×V)/(C_(B)+C), where V is the potentialof the first terminal of the capacitor 254, C is the capacitance of thecapacitor 254, C_(B) is the capacitance of the bit line BL (hereinafteralso referred to as bit line capacitance), and V_(B0) is the potentialof the bit line BL before the charge redistribution. Therefore, it canbe found that assuming that the memory cell 250 is in either of twostates in which the potentials of the first terminal of the capacitor254 are V₁ and V₀ (V₁>V₀), the potential of the bit line BL in the caseof holding the potential V₁ (=(C_(B)×V_(B0)+C×V₁)/(C_(B)+C)) is higherthan the potential of the bit line BL in the case of holding thepotential V₀ (=(C_(B)×V_(B0)+C×V₀)/(C_(B)+C)).

Then, by comparing the potential of the bit line BL with a predeterminedpotential, data can be read.

As described above, the semiconductor device illustrated in FIG. 8A canhold charge that is accumulated in the capacitor 254 for a long timebecause the off-state current of the transistor 162 is extremely low. Inother words, power consumption can be sufficiently reduced becauserefresh operation becomes unnecessary or the frequency of refreshoperation can be extremely low. Moreover, stored data can be held for along period even when power is not supplied.

Next, the semiconductor device illustrated in FIG. 8B will be described.

The semiconductor device illustrated in FIG. 8B includes a memory cellarray 251 a and a memory cell array 251 b including a plurality ofmemory cells 250 illustrated in FIG. 8A as memory circuits in the upperportion, and a peripheral circuit 253 in the lower portion, which isnecessary for operating a memory cell array 251 (memory cell arrays 251a and 251 b). Note that the peripheral circuit 253 is electricallyconnected to the memory cell array 251.

In the structure illustrated in FIG. 8B, the peripheral circuit 253 canbe provided under the memory cell array 251 (memory cell arrays 251 aand 251 b). Thus, the size of the semiconductor device can be decreased.

It is preferable that a semiconductor material of the transistorprovided in the peripheral circuit 253 be different from that of thetransistor 162. For example, silicon, germanium, silicon germanium,silicon carbide, or gallium arsenide can be used, and a single crystalsemiconductor is preferably used. Alternatively, an organicsemiconductor material or the like may be used. A transistor includingsuch a semiconductor material can operate at sufficiently high speed.Further, with the transistor, a variety of circuits (such as a logiccircuit or a driver circuit) which are required to operate at high speedcan be achieved favorably.

Note that FIG. 8B illustrates, as an example, the semiconductor devicein which two memory cell arrays 251 (memory cell arrays 251 a and 251 b)are stacked; however, the number of memory cell arrays to be stacked isnot limited thereto. Three or more memory cell arrays may be stacked.

Next, a specific structure of the memory cell 250 illustrated in FIG. 8Awill be described with reference to FIGS. 9A and 9B.

FIGS. 9A and 9B illustrate a structure example of the memory cell 250.FIG. 9A is a cross-sectional view of the memory cell 250, and FIG. 9B isa plan view of the memory cell 250. Here, FIG. 9A corresponds to crosssections taken along the lines F1-F2 and G1-G2 in FIG. 9B.

In this embodiment, the transistor 162 includes the insulating layer130, the oxide semiconductor layer 144 over the insulating layer 130,the gate insulating layer 146 over the oxide semiconductor layer 144,and the gate electrode layer 148 which overlaps with the oxidesemiconductor layer 144 with the gate insulating layer 146 providedtherebetween. In addition, the insulating layer 135 and the insulatinglayer 138 covering the transistor 162 are formed, and the electrodelayer 142 a and the electrode layer 142 b which are connected to theoxide semiconductor layer 144 through the openings provided in the gateinsulating layer 146, the insulating layer 135, and the insulating layer138 are formed.

The transistor 162 illustrated in FIGS. 9A and 9B can have a structuresimilar to the structure of the transistor described in Embodiment 1 orEmbodiment 2. Since the insulating layer 130 which functions as a baseinsulating layer of the transistor 162 is subjected to at least once adehydration or dehydrogenation treatment and a subsequent oxygen dopingtreatment so that water and hydrogen contents thereof are decreased andan oxygen content thereof is increased, the reliability of thetransistor 162 including the oxide semiconductor layer 144 provided overthe insulating layer 130 can be improved.

An insulating layer 256 having a single-layer structure or a layeredstructure is provided over the transistor 162. Furthermore, a conductivelayer 262 is provided in a region which overlaps with the electrodelayer 142 a of the transistor 162 with the insulating layer 256 providedtherebetween, and the electrode layer 142 a, the insulating layer 256,and the conductive layer 262 form the capacitor 254. That is, theelectrode layer 142 a of the transistor 162 functions as one electrodeof the capacitor 254, and the conductive layer 262 functions as theother electrode of the capacitor 254.

An insulating layer 258 is provided over the transistor 162 and thecapacitor 254. Further, a wiring 260 for connecting the memory cell 250to an adjacent memory cell 250 is provided over the insulating layer258. Although not illustrated, the wiring 260 is electrically connectedto the electrode layer 142 b of the transistor 162 through an openingprovided in the insulating layer 256, the insulating layer 258, and thelike. The wiring 260 may be electrically connected to the electrodelayer 142 b through another conductive layer provided in the opening.Note that the wiring 260 corresponds to the bit line BL in the circuitdiagram of FIG. 8A.

In FIGS. 9A and 9B, the electrode layer 142 b of the transistor 162 canalso function as a source electrode layer of a transistor included in anadjacent memory cell.

When the planar layout illustrated in FIGS. 9A and 9B is employed, thearea occupied by the semiconductor device can be reduced; thus, thedegree of integration can be increased.

As described above, the plurality of memory cells formed in multiplelayers in the upper portion each include a transistor including an oxidesemiconductor. Since the off-state current of the transistor includingan oxide semiconductor is small, stored data can be held for a long timeowing to such a transistor. In other words, power consumption can besufficiently reduced because the frequency of refresh operation can beextremely low.

In such a manner, a semiconductor device having a novel feature can beobtained by being provided with both a peripheral circuit including atransistor including a material other than an oxide semiconductor (inother words, a transistor capable of operating at sufficiently highspeed) and a memory circuit including a transistor including an oxidesemiconductor (in a broader sense, a transistor whose off-state currentis sufficiently low). In addition, with a structure where the peripheralcircuit and the memory circuit are stacked, the degree of integration ofthe semiconductor device can be increased.

As described above, a miniaturized and highly-integrated semiconductordevice having high electric characteristics and a method formanufacturing the semiconductor device can be provided.

The methods and structures described in this embodiment can be combinedas appropriate with any of the methods and structures described in theother embodiments.

Embodiment 5

In this embodiment, examples of application of the semiconductor devicedescribed in any of the above embodiments to portable devices such ascellular phones, smartphones, or e-book readers will be described withreference to FIGS. 10A and 10B, FIG. 11, FIG. 12, and FIG. 13.

In portable devices such as a mobile phone, a smartphone, and an e-bookreader, an SRAM or a DRAM is used so as to store image data temporarily.This is because response speed of a flash memory is low and thus a flashmemory is not suitable for image processing. On the other hand, an SRAMor a DRAM has the following characteristics when used for temporarystorage of image data.

As illustrated in FIG. 10A, in an ordinary SRAM, one memory cellincludes six transistors, that is, transistors 801 to 806, which aredriven with an X decoder 807 and a Y decoder 808. A pair of thetransistors 803 and 805 and a pair of the transistors 804 and 806 eachserve as an inverter, and high-speed driving can be performed therewith.However, since one memory cell includes six transistors, there is adisadvantage that the cell area is large. Provided that the minimumfeature size of a design rule is F, the area of a memory cell in an SRAMis generally 100 F² to 150 F². Therefore, a price per bit of an SRAM isthe highest among a variety of memory devices.

As illustrated in FIG. 10B, in a DRAM, a memory cell includes atransistor 811 and a storage capacitor 812, which are driven with an Xdecoder 813 and a Y decoder 814. One cell includes one transistor andone capacitor and thus the area of a memory cell is small. The area of amemory cell of a DRAM is generally less than or equal to 10 F². Notethat in the case of a DRAM, a refresh operation is always necessary andpower is consumed even when a rewriting operation is not performed.

However, the area of the memory cell of the semiconductor devicedescribed in the above embodiments is about 10 F² and frequentrefreshing is not needed. Therefore, the area of the memory cell isreduced, and the power consumption can be reduced.

Next, FIG. 11 is a block diagram of a portable device. The portabledevice illustrated in FIG. 11 includes an RF circuit 901, an analogbaseband circuit 902, a digital baseband circuit 903, a battery 904, apower supply circuit 905, an application processor 906, a flash memory910, a display controller 911, a memory circuit 912, a display 913, atouch sensor 919, an audio circuit 917, a keyboard 918, and the like.The display 913 includes a display portion 914, a source driver 915, anda gate driver 916. The application processor 906 includes a CPU 907, aDSP 908, and an interface 909 (IF 909). In general, the memory circuit912 includes an SRAM or a DRAM; by employing the semiconductor devicedescribed in any of the above embodiments for the memory circuit 912,writing and reading of data can be performed at high speed, stored datacan be held for a long time, and power consumption can be sufficientlyreduced.

FIG. 12 illustrates an example of using the semiconductor devicedescribed in any of the above embodiments in a memory circuit 950 for adisplay. The memory circuit 950 illustrated in FIG. 12 includes a memory952, a memory 953, a switch 954, a switch 955, and a memory controller951. Further, the memory circuit is connected to a display controller956 which reads and controls image data input through a signal line(input image data) and data stored in the memory 952 and the memory 953(stored image data), and is also connected to a display 957 whichdisplays an image based on a signal from the display controller 956.

First, image data (input image data A) is formed by an applicationprocessor (not illustrated). The input image data A is stored in thememory 952 through the switch 954. The image data (stored image data A)stored in the memory 952 is transmitted to the display 957 through theswitch 955 and the display controller 956 and is displayed on thedisplay 957.

In the case where the input image data A is not changed, the storedimage data A is read from the memory 952 through the switch 955 by thedisplay controller 956 normally at a frequency of 30 Hz to 60 Hz.

Next, for example, when data displayed on the screen is rewritten by auser (i.e., in the case where the input image data A is changed), newimage data (input image data B) is formed by the application processor.The input image data B is stored in the memory 953 through the switch954. The stored image data A is read periodically from the memory 952through the switch 955 even during that time. After the completion ofstoring the new image data (the stored image data B) in the memory 953,from the next frame for the display 957, the stored image data B startsto be read, transmitted to the display 957 through the switch 955 andthe display controller 956, and displayed on the display 957. Thisreading operation is continued until another new image data is stored inthe memory 952.

By alternately writing and reading image data to and from the memory 952and the memory 953 as described above, images are displayed on thedisplay 957. Note that the memory 952 and the memory 953 are not limitedto separate memories, and a single memory may be divided and used. Byemploying the semiconductor device described in any of the aboveembodiments for the memory 952 and the memory 953, data can be writtenand read at high speed and stored data can be held for a long time, andpower consumption can be sufficiently reduced.

FIG. 13 is a block diagram of an e-book reader. The e-book reader inFIG. 13 includes a battery 1001, a power supply circuit 1002, amicroprocessor 1003, a flash memory 1004, an audio circuit 1005, akeyboard 1006, a memory circuit 1007, a touch panel 1008, a display1009, and a display controller 1010.

Here, the semiconductor device described in any of the above embodimentscan be used for the memory circuit 1007 in FIG. 13. The memory circuit1007 has a function of temporarily storing the contents of a book. Forexample, users use a highlight function in some cases. When users readan e-book reader, they sometimes want to mark a specified place. Thismarking refers to a highlight function, and users can make differencefrom other places by, for example, changing the color of a letterdisplayed, underlining a word, making a letter bold, or changing thefont type of a letter. That is, there is a function of storing andholding data of a place specified by users. In order to save the datafor a long time, the data may be copied into the flash memory 1004. Evenin such a case, by employing the semiconductor device described in anyof the above embodiments, writing and reading of data can be performedat high speed, stored data can be held for a long time, and powerconsumption can be sufficiently reduced.

As described above, the semiconductor device in any of the aboveembodiments is mounted on each of the portable devices described in thisembodiment. Therefore, it is possible to obtain a portable device whichis capable of reading data at high speed, holding stored data for a longtime, and reducing power consumption.

The methods and structures described in this embodiment can be combinedas appropriate with any of the methods and structures described in theother embodiments.

Example

In this example, the transistor described in any of the aboveembodiments was fabricated, and the electric characteristics wereevaluated.

A method for fabricating a transistor of this example (hereinafter alsoreferred to as an example transistor) will be described below.

First, a silicon nitride oxide film having a thickness of 300 nm wasformed as a base insulating layer over a silicon substrate by aplasma-enhanced CVD method.

Next, by a CMP treatment performed on the surface of the base insulatinglayer, the surface of the base insulating layer, on which an oxidesemiconductor layer was to be formed, was planarized. The conditions ofthe CMP treatment were set as follows: polishing pad for CMP,polyurethane-based polishing cloth; slurry, NP8020 (produced by NittaHaas Incorporated) in undiluted form (a grain size of silica of 60 nm to80 nm); slurry temperature, room temperature; polishing pressure, 0.001MPa; the number of rotations of a table where the polishing cloth wasfixed, 60 rpm; and the number of spindle rotations on a side where thesubstrate was fixed, 56 rpm.

Next, as a dehydration or dehydrogenation treatment of the baseinsulating layer, the base insulating layer was heated at 650° C. undera vacuum atmosphere for an hour.

After that, oxygen ions were implanted by an ion implantation methodinto the base insulating layer subjected to the dehydration ordehydrogenation treatment. The conditions of the oxygen ion implantationwere set as follows: acceleration voltage, 50 kV; dosage, 2.0×10¹⁶ions/cm²; tilt angle, 7°; and twist angle, 72°.

Next, as an oxide semiconductor layer, an IGZO film having a thicknessof 20 nm was formed by a sputtering method over the base insulatinglayer with the use of an oxide target having a composition ratio ofIn:Ga:Zn=3:1:2 [atomic ratio]. Deposition conditions were set asfollows: mixed atmosphere containing argon and oxygen, Ar:O₂=30 sccm:15sccm; pressure, 0.4 Pa; electric power, 0.5 kW; and substratetemperature, 200° C.

The formed oxide semiconductor layer was processed into an island shapeby an inductively coupled plasma (ICP) etching method. Etchingconditions were set as follows: etching gas, a mixed gas of borontrichloride and chlorine (BCl₃:Cl₂=60 sccm:20 sccm); electric power, 450W; bias power, 100 W; and pressure, 1.9 Pa.

Next, as a gate insulating layer, a silicon nitride oxide film having athickness of 20 nm was deposited by a plasma-enhanced CVD method overthe island-shaped oxide semiconductor layer. The deposition temperatureof the gate insulating layer was set at 400° C.

A gate electrode layer was formed by stacking a tantalum nitride filmhaving a thickness of 30 nm and a tungsten film having a thickness of135 nm, which were deposited by a sputtering method, over the gateinsulating layer and then processing the stack by an etching method.Deposition conditions of the tantalum nitride film were set as follows:mixed atmosphere containing argon and nitrogen, Ar:N₂=50 sccm:10 sccm;pressure, 0.6 Pa; and electric power, 1 kW. Deposition conditions of thetungsten film were set as follows: argon atmosphere, Ar=100 sccm;pressure, 2.0 Pa; electric power, 4 kW; and heated argon gas which wasintroduced to heat the substrate, 10 sccm.

The tantalum nitride film and the tungsten film were subjected to firstto third etching. The first etching was performed under the followingconditions: etching gas, a mixed gas of chlorine, carbon tetrafluoride,and oxygen (Cl₂:CF₄:O₂=45 sccm:55 sccm:55 sccm); electric power, 3 kW;bias power, 110 W; pressure, 0.67 Pa; and substrate temperature, 40° C.Accordingly, the tungsten film was etched. After that, the secondetching was performed for 15 seconds under the following conditions:etching gas, a chlorine gas (Cl₂=100 sccm); electric power, 2 kW; biaspower, 50 W; pressure, 1.0 Pa; and substrate temperature, −10° C. Then,the third etching was performed for 50 seconds under the followingconditions: etching gas, a chlorine gas (Cl₂=100 sccm); electric power,1 kW; bias power, 25 W; pressure, 2.0 Pa; and substrate temperature,−10° C. Accordingly, the tantalum nitride film was etched.

Next, phosphorus (P) ion implantation was performed on the oxidesemiconductor layer by an ion implantation method with the use of thegate electrode layer as a mask, so that a pair of low-resistance regionsand a channel formation region were formed in a self-aligned manner. Theconditions of the phosphorus (P) ion implantation were set as follows:acceleration voltage, 30 kV; dosage, 1.0×10¹⁵ ions/cm²; tilt angle, 7°;and twist angle, 72°.

Next, as an interlayer insulating layer, an aluminum oxide film and asilicon nitride oxide film were stacked over the gate electrode layer.The aluminum oxide film was deposited by a sputtering method, anddeposition conditions were set as follows: mixed atmosphere containingargon and oxygen, Ar:O₂=25 sccm:25 sccm; pressure, 0.4 Pa; electricpower, 2.5 kW; and substrate temperature, 250° C. The thickness of thealuminum oxide film was set to 70 nm. The silicon nitride oxide film wasdeposited to a thickness of 350 nm by a plasma-enhanced CVD method.

After the interlayer insulating layer was formed, a heat treatment wasperformed at 400° C. under an oxygen atmosphere for an hour.

After that, a first opening that reaches one of the low-resistanceregions of the oxide semiconductor layer was formed in the interlayerinsulating layer and the gate insulating layer. First etching wasperformed for 148 seconds and then second etching was performed for 84seconds to form the first opening. The first etching conditions were setas follows: etching gas, a mixed gas of trifluoromethane and helium(CHF₃:He=7.5 sccm:142.5 sccm); electric power, 475 W; bias power, 300 W;and pressure, 5.5 Pa. The second etching conditions were set as follows:etching gas, a mixed gas of trifluoromethane and helium (CHF₃:He=7.5sccm:142.5 sccm); electric power, 475 W; bias power, 150 W; andpressure, 5.5 Pa.

After a resist mask is removed by O₂ ashing (performed at an electricpower of 200 W and a pressure of 0.5 Torr for 120 seconds), a secondopening that reaches the other of the low-resistance regions of theoxide semiconductor layer was formed in the interlayer insulating layerand the gate insulating layer with a new resist mask. Etching forforming the second opening was performed under the same conditions asthe etching for forming the first opening.

After the resist mask was removed by O₂ ashing (performed at an electricpower of 200 W and a pressure of 0.5 Torr for 120 seconds), a tungstenfilm was formed to a thickness of 600 nm over the interlayer insulatinglayer so as to cover the first opening and the second opening. Thetungsten film was deposited by a sputtering method, and depositionconditions were set as follows: argon atmosphere, Ar=80 sccm; pressure,0.8 Pa; electric power, 1 kW; and heated argon gas which was introducedto heat the substrate, 10 sccm.

Next, a CMP treatment was performed on the formed tungsten film, and atleast a region of the tungsten film, which overlaps with the gateelectrode layer, was removed to form a source electrode layer and adrain electrode layer. The conditions of the CMP treatment were set asfollows: polishing pad for CMP, a polyurethane-based polishing cloth;slurry, 1000 ml of SSW2000 (produced by Cabot Corporation) to which 135ml of an hydrogen peroxide solution was added; slurry temperature, roomtemperature; polishing pressure, 0.01 MPa; the number of rotations of atable where the polishing cloth was fixed, 35 rpm; and the number ofspindle rotations on a side where the substrate was fixed, 39 rpm.

Next, a titanium film having a thickness of 50 nm, an aluminum filmhaving a thickness of 100 nm, and a titanium film having a thickness of50 nm were deposited by a sputtering method over the source electrodelayer and the drain electrode layer. Deposition conditions of thetitanium films were set as follows: argon atmosphere (Ar=20 sccm);pressure, 0.1 Pa; electric power, 12 kW; and deposition temperature,room temperature. Deposition conditions of the aluminum film were set asfollows: argon atmosphere (Ar=50 sccm); pressure, 0.4 Pa; electricpower, 1 kW; and deposition temperature, room temperature.

The stack of the titanium film, the aluminum film, and the titanium filmwas etched to form a source wiring layer and a drain wiring layer.Etching conditions were set as follows: etching gas, a mixed gas ofboron trichloride and chlorine (BCl₃:Cl₂=60 sccm:20 sccm); electricpower, 450 W; bias power, 100 W; and pressure, 1.9 Pa.

After that, a polyimide film was formed to a thickness of 1.5 μm by acoating method and subjected to a heat treatment at 300° C. under theatmospheric atmosphere for an hour.

Through the above process, the transistor of this example wasfabricated.

As a comparative example, a comparison transistor 1 whose baseinsulating layer was subjected to neither a dehydration ordehydrogenation treatment nor an oxygen ion implantation treatment(oxygen doping treatment) and a comparison transistor 2 whose baseinsulating layer was not subjected to a dehydration or dehydrogenationtreatment but subjected to an oxygen ion implantation treatment (oxygendoping treatment) were fabricated. The comparison transistor 1 wasfabricated in a manner similar to that of the example transistor, exceptthat the base insulating layer was subjected to neither the dehydrationor dehydrogenation treatment nor the oxygen ion implantation treatment(oxygen doping treatment). The comparison transistor 2 was fabricated ina manner similar to that of the example transistor, except that the baseinsulating layer was not subjected to the dehydration or dehydrogenationtreatment.

Note that in each of the example transistor, the comparison transistor1, and the comparison transistor 2 which were fabricated in thisexample, a channel length (L) was set to 9.9 μm, a channel width (W) wasset to 10 μm, and a distance between a gate electrode layer and acontact region of an oxide semiconductor layer and a source electrodelayer (or a drain electrode layer) was set to 0.1 μm.

The evaluation results of the electric characteristics of thetransistors which were fabricated are shown in FIGS. 14A to 14C.

Electric characteristics shown in FIGS. 14A to 14C are measurementresults of values of a drain current (Id: [A]) and a field-effectmobility (μFE: [cm²/Vs]) when a drain voltage (Vd) was set to 1 V or 0.1V and a gate voltage (Vg) was set to range from −4 V to 4 V. Note that adrain voltage (Vd) refers to a potential difference between a drain anda source when the potential of the source is used as a referencepotential.

FIG. 14A shows the evaluation result of the electric characteristics ofthe comparison transistor 1, FIG. 14B shows the evaluation result of theelectric characteristics of the comparison transistor 2, and FIG. 14Cshows the evaluation result of the electric characteristics of theexample transistor.

As shown in FIG. 14A, in the comparison transistor 1 whose baseinsulating layer was not subjected to an oxygen doping treatment,electric characteristics as a switching element were not obtained. Onthe other hand, as shown in FIGS. 14B and 14C, the comparison transistor2 and the example transistor whose base insulating layers were eachsubjected to an oxygen doping treatment exhibited electriccharacteristics as switching elements. Accordingly, the graphs showedthat the transistors can have stable electric characteristics by theoxygen doping treatment performed on the respective base insulatinglayers.

The on-state current value of the comparison transistor 2 whose baseinsulating layer was not subjected to a dehydration or dehydrogenationtreatment was lower than the example transistor and stopped increasing.Further, the field-effect mobility of the comparison transistor 2 was0.7 cm²/Vs when the drain voltage (Vd) was 0.1 V, whereas thefield-effect mobility of the example transistor, which was as high as 16cm²/Vs, was obtained when the drain voltage (Vd) was 0.1 V. Accordingly,the graphs showed that the transistor can have stable electriccharacteristics by the dehydration or dehydrogenation treatmentperformed on the base insulating layer.

This application is based on Japanese Patent Application serial No.2011-257633 filed with the Japan Patent Office on Nov. 25, 2011, theentire contents of which are hereby incorporated by reference.

What is claimed is:
 1. A method for manufacturing a semiconductor devicecomprising the steps of: forming an insulating layer over an insulatingsurface; performing a first heat treatment after forming the insulatinglayer; performing an oxygen doping treatment by at least one of an ionimplantation method, an ion doping method, and a plasma immersion ionimplantation method after the first heat treatment; forming an oxidesemiconductor layer over the insulating layer after the oxygen dopingtreatment; forming a gate insulating layer over the oxide semiconductorlayer; and forming a gate electrode layer over the gate insulatinglayer.
 2. The method for manufacturing the semiconductor deviceaccording to claim 1, wherein the insulating layer is formed by aplasma-enhanced chemical vapor deposition method.
 3. The method formanufacturing the semiconductor device, according to claim 1, whereinthe oxygen doping treatment is performed by using a linear ion beam. 4.The method for manufacturing the semiconductor device according to claim1, wherein water contained in the insulating layer is removed byperforming the first heat treatment.
 5. The method for manufacturing thesemiconductor device according to claim 1, wherein hydrogen contained inthe insulating layer is removed by performing the first heat treatment.6. The method for manufacturing the semiconductor device according toclaim 1, wherein oxygen is supplied to the insulating layer byperforming the oxygen doping treatment.
 7. The method for manufacturingthe semiconductor device according to claim 1, further comprising thestep of: performing a second heat treatment after forming the oxidesemiconductor layer.
 8. The method for manufacturing the semiconductordevice according to claim 7, wherein oxygen is supplied to the oxidesemiconductor layer from the insulating layer by the second heattreatment.
 9. A method for manufacturing a semiconductor devicecomprising the steps of: forming an insulating layer over an insulatingsurface; performing a first oxygen doping treatment by at least one ofan ion implantation method, an ion doping method, and a plasma immersionion implantation method after forming the insulating layer; performing afirst heat treatment after performing the first oxygen doping treatment;performing a second oxygen doping treatment after performing the firstheat treatment; forming an oxide semiconductor layer over the insulatinglayer after the second oxygen doping treatment; forming a gateinsulating layer over the oxide semiconductor layer; and forming a gateelectrode layer over the gate insulating layer.
 10. The method formanufacturing the semiconductor device according to claim 9, wherein theinsulating layer is formed by a plasma-enhanced chemical vapordeposition method.
 11. The method for manufacturing the semiconductordevice, according to claim 9, wherein the first oxygen doping treatmentis performed by using a linear ion beam.
 12. The method formanufacturing the semiconductor device according to claim 9, whereinwater contained in the insulating layer is removed by performing thefirst heat treatment.
 13. The method for manufacturing the semiconductordevice according to claim 9, wherein hydrogen contained in theinsulating layer is removed by performing the first heat treatment. 14.The method for manufacturing the semiconductor device according to claim9, wherein oxygen is supplied to the insulating layer by performing atleast one of the first oxygen doping treatment and the second oxygendoping treatment.
 15. The method for manufacturing the semiconductordevice according to claim 9, further comprising the step of: performinga second heat treatment after forming the oxide semiconductor layer. 16.The method for manufacturing the semiconductor device according to claim15, wherein oxygen is supplied to the oxide semiconductor layer from theinsulating layer by the second heat treatment.
 17. The method formanufacturing the semiconductor device, according to claim 9, whereinthe second oxygen doping treatment is performed by at least one of theion implantation method, the ion doping method, and the plasma immersionion implantation method.
 18. The method for manufacturing thesemiconductor device, according to claim 17, wherein the second oxygendoping treatment is performed by using a linear ion beam.
 19. A methodfor manufacturing a semiconductor device comprising the steps of:forming an insulating layer over an insulating surface; performing aheat treatment after forming the insulating layer; performing an oxygendoping treatment to introduce an oxygen ion into the insulating layer byat least one of an ion implantation method, an ion doping method, and aplasma immersion ion implantation method after the heat treatment;forming an oxide semiconductor layer over the insulating layer after theoxygen doping treatment; forming a gate insulating layer over the oxidesemiconductor layer; and forming a gate electrode layer over the gateinsulating layer.
 20. The method for manufacturing the semiconductordevice, according to claim 19, wherein the oxygen ion comprises at leastone of a molecular ion and a cluster ion.